Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS== | ==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS== | ||
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]] | [[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]] | ||
At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 10 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The reactive gases are dinitrogenoxide and silane. The LPCVD TEOS has a excellent step coverage and extreamly good for trench filling and the film thickness is very uniform over the wafer. We have two standard LPCVD TEOS processes: One that opens slowly for depositing thick layers (>750nm) and one for deposition of thin layers that opens faster. To get information on how to operate the furnace please read the manual which is uploaded to LabManager. | At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 10 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The reactive gases are dinitrogenoxide and silane. The LPCVD TEOS has a excellent step coverage and extreamly good for trench filling and the film thickness is very uniform over the wafer. We have two standard LPCVD TEOS processes: One that opens slowly for depositing thick layers (>750nm) and one for deposition of thin layers that opens faster. To get information on how to operate the furnace please read the manual which is uploaded to LabManager. Remember to anneal the TEOS oxide to improve the electrical properties as well as chemical resistance. | ||
==Process Knowledge== | ==Process Knowledge== | ||