Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS== | ==LPCVD (Low Pressure Chemical Vapor Deposition) TEOS== | ||
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]] | [[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS: positioned in cleanroom 2]] | ||
At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of | At the moment there is one furnace for TEOS oxide depositions at Danchip. The furnace is a Tempress horizontal furnace. The process is a batch process meaning you can run a batch of 10 wafers at a time. The deposition takes place at temperatures of 725 degrees Celsius. The reactive gases are dinitrogenoxide and silane. The LPCVD TEOS has a excellent step coverage and extreamly good for trench filling and the film thickness is very uniform over the wafer. We have two standard LPCVD TEOS processes: One that opens slowly for depositing thick layers (>750nm) and one for deposition of thin layers that opens faster. To get information on how to operate the furnace please read the manual which is uploaded to LabManager. | ||
==Process Knowledge== | ==Process Knowledge== | ||