Jump to content

Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions

← Older editNewer edit →
VisualWikitext
Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
No edit summary
Choi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, danchip
641 edits
Line 8: Line 8:
[[image:Furnace_nitride1.jpg|300x300px|right|thumb|4" LPCVD nitride furnace (B2) located in cleanroom B-1]]
[[image:Furnace_nitride1.jpg|300x300px|right|thumb|4" LPCVD nitride furnace (B2) located in cleanroom B-1]]


==<span style="color:Red">From April 2016 the processed on the LPCVD nitride furnaces have been changed, so that only stoichiometric nitride is deposited in the 4" nitride furnace, and only low stress (silicon rich) nitride is deposited in the 6" nitride furnace</span>==
==<span style="color:Red">From April 2016 the processes on the LPCVD nitride furnaces have been changed, so that only stoichiometric nitride is deposited in the 4" nitride furnace, and only low stress (silicon rich) nitride is deposited in the 6" nitride furnace</span>==


[[image:Under_construction.png|100px]]
[[image:Under_construction.png|100px]]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_Nitride"