Jump to content

LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/EMT Procces flow: Difference between revisions

← Older editNewer edit →
VisualWikitext
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
Line 26: Line 26:


|-
|-
!2.1
!1.1
|Plasma surface treatment
|Plasma surface treatment
|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma.
|To ensure clean surface, the 100 mm Si wafer is treated by O<sub>2</sub>/N<sub>2</sub> plasma.
Line 35: Line 35:
|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!2.2
!1.2
|Deposition of 1 µm Si<sub>3</sub>N<sub>4</sub> layer
|Deposition of 1 µm Si<sub>3</sub>N<sub>4</sub> layer
|Deposition carries 7 times in order to get 1 µm thick film
|Deposition carries 7 times in order to get 1 µm thick film
Line 43: Line 43:


|-
|-
!2.3
!1.3
|Surface investigation using optical microscopy in dark field mode
|Surface investigation using optical microscopy in dark field mode
|The best quility wafer selects and cleaves in four pieces.  
|The best quility wafer selects and cleaves in four pieces.  
Line 52: Line 52:
|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!2.4
!1.4
|TiO<sub>2</sub>/Al<sub>3</sub>O<sub>3</sub> multilayers deposition using Atomic Layer Deposition
|TiO<sub>2</sub>/Al<sub>3</sub>O<sub>3</sub> multilayers deposition using Atomic Layer Deposition
|Deposition using recipies <b>EMA01</b>, <b>EMA02</b>, <b>EMA03</b> and <b>EMA04</b>.
|Deposition using recipies <b>EMA01</b>, <b>EMA02</b>, <b>EMA03</b> and <b>EMA04</b>.
Line 60: Line 60:


|-
|-
!2.5
!1.5
|Scanning Electron Microscopy inspection  
|Scanning Electron Microscopy inspection  
|By cleaving the sample it is possible to inspect depositet ALD layers uniformity in cross-sectional mode
|By cleaving the sample it is possible to inspect depositet ALD layers uniformity in cross-sectional mode
Line 75: Line 75:
|-
|-
|- style="background:#BCD4E6; color:black"
|- style="background:#BCD4E6; color:black"
!2.6
!1.6
|XPS inspection for elemental trace analysis
|XPS inspection for elemental trace analysis
|XPS can be used in depth profile mode. Ar<sup>+</sup> ions erodes the surface of multilayers, allowing the inspection of each layer.
|XPS can be used in depth profile mode. Ar<sup>+</sup> ions erodes the surface of multilayers, allowing the inspection of each layer.
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=LabAdviser/Technology_Research/Fabrication_of_Hyperbolic_Metamaterials_using_Atomic_Layer_Deposition/EMT_Procces_flow"