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LabAdviser/Technology Research/Fabrication of Hyperbolic Metamaterials using Atomic Layer Deposition/EMT Procces flow: Difference between revisions

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Eves (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
4,346 edits
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|TiO<sub>2</sub>/Al<sub>3</sub>O<sub>3</sub> multilayers deposition using Atomic Layer Deposition
|TiO<sub>2</sub>/Al<sub>3</sub>O<sub>3</sub> multilayers deposition using Atomic Layer Deposition
|Deposition using recipies EMA01, EMA02, EMA03 and EMA04.
|Deposition using recipies EMA01, EMA02, EMA03 and EMA04.
|[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]], Recipies performance [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers|Multilayrs recipies and their performance]]  .
|[[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200|ALD Picosun R200]], Recipies performance [[Specific_Process_Knowledge/Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers#Low_temperature_grown_multilayers_on_flat_surfaces|Multilayrs recipies and their performance]]  .
|[[image:2 lithography mask 1.jpg|250x350px|center]]
|[[image:2 lithography mask 1.jpg|250x350px|center]]
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|-
!2.5
!2.5
|Develop photoresist
|Scanning Electron Microscopy inspection
|In the development step the '''exposed resist is removed,''' so that a resist pattern is formed on the surface.
|By cleaving the sample it is possible to inspect depositet ALD layers uniformity in cross-sectional mode
|[[Specific Process Knowledge/Lithography/Development|Development,]] standard development times are listed.
|[[Specific Process Knowledge/Lithography/Development|Development,]] standard development times are listed.
|[[image:1 Lithography.jpg|250x350px|center]]
|[[image:1 Lithography.jpg|250x350px|center]]
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|Optical microscope inspection
|Optical microscope inspection
|Check the results of the exposure and development with an optical microscope by inspecting that the pattern and alignment marks are clearly visible. Right image: top view of alignment marks. The alignment marks will be used to align the wafer to the mask in next lithography step (section 5).
|Check the results of the exposure and development with an optical microscope by inspecting that the pattern and alignment marks are clearly visible. Right image: top view of alignment marks. The alignment marks will be used to align the wafer to the mask in next lithography step (section 5).
||The different [[Specific_Process_Knowledge/Characterization/Optical_microscope| optical microscopes]] and their features are listed.
||The different [[Thin_film_deposition/ALD_Picosun_R200/ALD_multilayers#Investigation_of_chemical_composition_in_multilayers_system| XPS results]] and their features are listed.
  |[[image:mask1_SiO-etch-2.jpg|150x150px|center]]
  |[[image:mask1_SiO-etch-2.jpg|150x150px|center]]
|-
|-
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