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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
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! QC Recipe:
! QC Recipe:
! QCOXYD
! QCOXYD2
|-  
|-  
| SiH<sub>4</sub> flow
| SiH<sub>4</sub> flow
Line 276: Line 276:
|-  
|-  
|Pressure
|Pressure
|550 mTorr
|700 mTorr
|-
|-
|RF-power
|RF-power
|60 W
|150 W
|-
|-
|}
|}
Line 288: Line 288:
|-
|-
|Deposition rate
|Deposition rate
|66 - 89 nm/min
|97 - 112 nm/min
|-
|-
|Non-uniformity
|Non-uniformity
|<1.9%
|<2.0
|-
|-
|Refractive index
|Refractive index
|1.472 - 1.487
|1.467 - 1.474
|-
|-
|}
|}
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|-
|-
|LFSiO2
|LFSiO2
|
|105nm/min
|
|1.47
|
|~1.5%
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|-  
|-  
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