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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 353: Line 353:
|RI
|RI
|Uniformity [%]
|Uniformity [%]
|Stress
|-
|LFSiO2
|
|
|
|'''400-402 MPa''' compressive stress '' by Anders Simonsen @nbi.ku.dk April 2016''
|-  
|-  
|LFSiO
|LFSiO
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|~1.48
|~1.48
|<1
|<1
|not measured
|-
|-
|1PBSG
|1PBSG
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|.
|.
|~17%
|~17%
|not measured
|}
|}
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