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Specific Process Knowledge/Pattern Design: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,146 edits
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For the [[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]], [[Specific Process Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6-2]] and [[Specific Process Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]  
For the [[Specific Process Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]], [[Specific Process Knowledge/Lithography/UVExposure#Aligner:_MA6_-_2|MA6-2]] and [[Specific Process Knowledge/Lithography/UVExposure#Aligner-6inch|Aligner-6inch]]  
   
   
*The mask's alignment marks for 4inch process:
*The mask's alignment marks for 4inch process:
**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).  
**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).  
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