Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

Revision as of 15:28, 27 February 2008

A3 Furnace Phosphorus drive-in

A3 phosphorus drive-in furnace: positioned in cleanroom 2

A3 Furnace phosphorus drive-in is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide, drive-in of phosphor after a pre-deposition. Phospher pre-deposition takes place in the A4 Furnace phosphorus pre-dep. A3 can also be used for drive in of phosphor which has been ion implanted.

A3 is the third furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with furnace C1 are the cleanest of all our furnaces. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart. If you are in doubt, please ask one from the furnace team.

Process knowledge

Phosphorus drive-in: look at the Dope with Phosphorus page
Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

A rough overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose	Drive-in of phosphor, oxidation of silicon and annealing of the oxide.	Oxidation: Dry Wet: with torch (H $_{2}$ +O $_{2}$ )
Performance	Film thickness	Dry SiO₂: 50Å to ~2000Å (takes too long to make it thicker) Wet SiO₂: 50Å to ~3µm ((takes too long to make it thicker)
Process parameter range	Process Temperature	800-1150 ^oC
.	Process pressure	1 atm
.	Gasses on the system	O $_{2}$ , N $_{2}$ and H $_{2}$
Substrates	Batch size	1-30 4" wafer (or 2" wafers) per run
.	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned) From A4 furnace directly (e.g. incl. Predep HF) In doubt: look at the cross contamination sheet or ask one from the furnace team

@@ Line 19: / Line 19: @@
 |-
 !style="background:silver; color:black;" align="left"|Purpose
-|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation and annealing ||style="background:WhiteSmoke; color:black"|Oxidation:
+|style="background:LightGrey; color:black"|Drive-in of phosphor, oxidation of silicon and annealing of the oxide.||style="background:WhiteSmoke; color:black"|Oxidation:
 *Dry
 *Wet: with torch (H<math>_2</math>+O<math>_2</math>)
@@ Line 26: / Line 26: @@
 |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
 *Dry SiO<sub>2</sub>: 50Å  to ~2000Å (takes too long to make it thicker)
-*Wet SiO<sub>2</sub>: 50Å to ~5µm ((takes too long to make it thicker)
+*Wet SiO<sub>2</sub>: 50Å to ~3µm ((takes too long to make it thicker)
 |-
 !style="background:silver; color:black" align="left"|Process parameter range
@@ Line 37: / Line 37: @@
 *1 atm
 |-
-|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gas flows
+|style="background:silver; color:black"|.||style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*H<math>_2</math>:? sccm
+*O<math>_2</math>, N<math>_2</math> and H<math>_2</math>
-*N<math>_2</math>:? sccm
 |-
 !style="background:silver; color:black" align="left"|Substrates
@@ Line 50: / Line 49: @@
 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (new from the box or RCA cleaned)
-**with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
-*Quartz wafers (RCA cleaned)
 *From A4 furnace directly (e.g. incl. Predep HF)
+*In doubt: look at the cross contamination sheet or ask one from the furnace team
 |-
 |}