Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
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After removing the oxide in BHF the wafers were oxidized in Phosphor Drive in Furnace (A3) using DRY1050 at 1050°C for 70 min without further annealing in N<sub>2</sub>. Results are listed in the table below: | After removing the oxide in BHF the wafers were oxidized in Phosphor Drive in Furnace (A3) using DRY1050 at 1050°C for 70 min without further annealing in N<sub>2</sub>. Results are listed in the table below: | ||
====Results==== | |||
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'''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal | '''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal | ||
====Results==== | |||
The wafer was analyzed with SIMS and the profile is shown on the graph below: | The wafer was analyzed with SIMS and the profile is shown on the graph below: | ||