Jump to content

Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

← Older editNewer edit →
VisualWikitext
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,142 edits
Kabi (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
1,142 edits
No edit summary
Line 171: Line 171:


==Test of the Phosphorus Predep furnace==
==Test of the Phosphorus Predep furnace==
'''
====Purpose====
'''
To find the result of a specific process using the Phosphorus Predep furnace (A4) followed by a drive in and oxidating the substrate in the Phosphorous drive in furnace (A3).
'''
====Experimental setup====
'''


====1. Process parameters====
'''Substrate:''' p-type Si(100,)  
'''Substrate:''' p-type Si(100,)  


Line 241: Line 249:
"Result from GreenBelt, @Danchip,Jan 2015"
"Result from GreenBelt, @Danchip,Jan 2015"


====2. Test of the Phosphorus Predep furnace====
==Test of the Phosphorus Predep furnace==
 
'''
====Purpose====
'''
 
To find the doping profile after a specific process flow. The test was made by only performing the high-temperature process step after the pre-deposition step done in the Phosphorus Predep furnace (A4). The subsequently high temperature processes was done by using the Phosphorous drive in furnace (A3) and the Oxide Anneal Furnace (C3).
'''
====Experimental setup====
'''


'''Substrate:''' p-type Si(100,)  
'''Substrate:''' p-type Si(100,)  
Line 247: Line 265:
'''Resistivity:''' 1-20 Ωcm  
'''Resistivity:''' 1-20 Ωcm  


The total thermal budget for the wafers:
'''The total thermal budget for the wafers:'''


'''Predeposition in Furnace (A4):''' POCL1000, 15 min, no further anneal
'''Predeposition in Furnace (A4):''' POCL1000, 15 min, no further anneal
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Dope_with_Phosphorus"