Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
Appearance
| Line 174: | Line 174: | ||
====1. Process parameters==== | ====1. Process parameters==== | ||
'''Substrate:''' p-type Si(100) 1-20 Ωcm | '''Substrate:''' p-type Si(100,) | ||
'''Resistivity:''' 1-20 Ωcm | |||
'''Recipe:''' POCL900 | '''Recipe:''' POCL900 | ||