Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions
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One wafer from Jan2015 was analyzed with SIMS and the | One wafer from Jan2015 was analyzed with SIMS and the profile is shown on the graph below: | ||
[[image:Phosphorus_doping2015.jpg|600x600px|left|thumb|SIMS Measurement After Predeposition, before and after oxidation respectively]] | [[image:Phosphorus_doping2015.jpg|600x600px|left|thumb|SIMS Measurement After Predeposition, before and after oxidation respectively]] | ||
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''Result from Trine Holm Christensen, @Space, Feb. 2015'' | ''Result from Trine Holm Christensen, @Space, Feb. 2015'' | ||
====Process parameters==== | |||
The total thermal budget for the wafers: | |||
'''Predeposition in Furnace (A4):''' POCL1000, 15 min, no further anneal | |||
'''Wet Oxidation in Furnace (A3)''': WET1050, 30 min, no further anneal | |||
'''Anneal in Furnace (C1):''' ANN1000, 30 min in N<sub>2</sub> | |||
'''Wet oxidation in Furnace (C1):''' WET1050, 30 min, no further anneal | |||
The wafer was analyzed with SIMS and the profile is shown on the graph below: | |||
[[image:Phosphorus_doping2015.jpg|600x600px|left|thumb|SIMS Measurement after Phosphorous Predeposition and several oxidations and annealings]] | |||
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====Process parameters==== | ====Process parameters==== | ||