Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing: Difference between revisions
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|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness | ||
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*Dry oxidation: 50 Å to ~200 nm | *Dry oxidation: 50 Å to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker layer) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||