Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing: Difference between revisions

← Older edit Newer edit →

VisualWikitext

@@ Line 48: / Line 48: @@
 |style="background:WhiteSmoke; color:black"|
 *Dry oxidation of silicon
-*Annealing in N<sub>2</sub> and H<sub>2</sub>
+*Annealing in N<sub>2</sub>, H<sub>2</sub> or a mixture of the two gasses
 *Pyrolysis of different resists
 |-
@@ Line 54: / Line 54: @@
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
+*Dry oxidation: 50 Å  to ~200 nm Å SiO<sub>2</sub> (it takes too long to grow a thicker layer)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
@@ Line 65: / Line 65: @@
 |style="background:WhiteSmoke; color:black"|
 *1 atm
-*Vacuum down to ~0.1 mbar
+*Vacuum down to ~0.1 mbar (depends on gas flow)
 |-
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub>
+*N<sub>2</sub>: 20 sccm
-*O<sub>2</sub>
+*O<sub>2</sub>: 10 sccm
-*H<sub>2</sub>
+*H<sub>2</sub>: 5 sccm (max 2 sccm for vacuum processes)
+*N<sub>2</sub>-H<sub>2</sub> mix: 10 sccm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
@@ Line 77: / Line 78: @@
 |style="background:WhiteSmoke; color:black"|
 *1-30 50 mm, 100 mm or 150 mm wafers per run
-*1-50 200 mm wafers per run
+*1-50 200 mm wafers per run (not possible with all quartz sets)
+*Smaller samples (placed in a Si carrier wafer)
 |-
-| style="background:LightGrey; color:black"|Substrate materials allowed
+|style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Depends on furnace tube
+*Depends on the quartz set
 |-
 |}