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Multipurpose annealing furnace

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The ATV Furnace

The Multipurpose annealing furnace it made by the company ATV Technologie, and it was installed in the cleanroom in 2014.

The purpose of the ATV Furnace is annealing and dry oxidation of different samples and resist pyrolysis. Annealling and resist pyrolysis can be done in vaccum or at atmospheric pressure, in a N₂, H₂ or a mixture of the two gasses.

Is is possible to change all quartz ware in the furnace (the furnace tube, the door sealing and the wafer boat). A the moment Danchip is has three different sets of quartz ware:

Clean: Dedicated for clean samples that have been RCA cleaned
Metal: Dedicated for different samples that cannot be RCA cleaned. Also samples with metals are allowed in the furnace, when this quartz set is mounted
Resist pyrolysis: Dedicated for resist pyrolysis.

Please note that all new materials have to be approved by the Thin Film group (thinfilm@danchip.dtu.dk) before they are allowed in the furnace.

The furnace tube is heated by use on 12 long heaters situated along the furnace tube and two flat heaters situated in the ends of the furnace tube. The this way the temperature will be very uniform everywhere in the furnace tube. The heating can be done very fast, up to 30 ^oC/min. For atmospheric pressure processes the maximum temperature is 1100 ^oC, and for vacuum processes the maximum temperature is 1050 ^oC. Cooling is done (rather slowly) by use of cooling fans.

For resist pyrolysis, samples with different resist layers are heated up to maximum 1100 ^oC in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample. If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed, thus it is important to evacuate the furnace and flush it with nitrogen, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.

The user manual, technical information and contact information can be found in LabManager:

Furnace: Multipurpose annealing

Process information

Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

Overview of the performance of the ATV furnace and process related parameters

Purpose		Dry oxidation of silicon Annealing in N₂, H₂ or a mixture of the two gasses Pyrolysis of different resists
Performance	Film thickness	Dry oxidation: 50 Å to ~200 nm Å SiO₂ (it takes too long to grow a thicker layer)
Process parameter range	Process Temperature	No vacuum: 25 ^oC - 1100 ^oC Vacuum: 25 ^oC - 1050 ^oC
	Process pressure	1 atm Vacuum down to ~0.1 mbar (depends on gas flow)
	Gasses on the system	N₂: 20 sccm O₂: 10 sccm H₂: 5 sccm (max 2 sccm for vacuum processes) N₂-H₂ mix: 10 sccm
Substrates	Batch size	1-30 50 mm, 100 mm or 150 mm wafers per run 1-50 200 mm wafers per run (not possible with all quartz sets) Smaller samples (placed in a Si carrier wafer)
Substrates	Substrate materials allowed	Depends on the quartz set

@@ Line 48: / Line 48: @@
 |style="background:WhiteSmoke; color:black"|
 *Dry oxidation of silicon
-*Annealing in N<sub>2</sub> and H<sub>2</sub>
+*Annealing in N<sub>2</sub>, H<sub>2</sub> or a mixture of the two gasses
 *Pyrolysis of different resists
 |-
@@ Line 54: / Line 54: @@
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50 Å  to ~2000 Å (it takes too long to grow a thicker oxide)
+*Dry oxidation: 50 Å  to ~200 nm Å SiO<sub>2</sub> (it takes too long to grow a thicker layer)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
@@ Line 65: / Line 65: @@
 |style="background:WhiteSmoke; color:black"|
 *1 atm
-*Vacuum down to ~0.1 mbar
+*Vacuum down to ~0.1 mbar (depends on gas flow)
 |-
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*N<sub>2</sub>
+*N<sub>2</sub>: 20 sccm
-*O<sub>2</sub>
+*O<sub>2</sub>: 10 sccm
-*H<sub>2</sub>
+*H<sub>2</sub>: 5 sccm (max 2 sccm for vacuum processes)
+*N<sub>2</sub>-H<sub>2</sub> mix: 10 sccm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
@@ Line 77: / Line 78: @@
 |style="background:WhiteSmoke; color:black"|
 *1-30 50 mm, 100 mm or 150 mm wafers per run
-*1-50 200 mm wafers per run
+*1-50 200 mm wafers per run (not possible with all quartz sets)
+*Smaller samples (placed in a Si carrier wafer)
 |-
-| style="background:LightGrey; color:black"|Substrate materials allowed
+|style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*Depends on furnace tube
+*Depends on the quartz set
 |-
 |}