Specific Process Knowledge/Thermal Process/Furnace: Multipurpose annealing

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Multipurpose annealing furnace

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The ATV Furnace

ATV PEO-604 furnace. Positioned in cleanroom B-1

The purpose of the ATV Furnace is to...

Is is possible to change all quartz ware in the furnace (the furnace tube and door and the wafer boat), so that different furnace tubes can he

The furnace is heated by use on 12 long heaters that are situated along the furnace tube and two flat heaters that are situated in the ends of the furnace tube. The that way the temperature will be very uniform everywhere in the furnace tube. For atmospheric pressure processes the maximum temperature is 1100 ^oC, and for vacuum processes the maximum temperature is 1050 ^oC. Very fast heating..

For resist pyrolysis, where samples with different resist layers are heated up to maximum 1100 ^oC in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample. If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed, thus it is important to evacuate the furnace and flush it with nitrogen, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.

During processing the furnace is rapidly heated by use of six long heating lamps situated around the furnace tube, and cooling is done (rather slowly) by use of cooling fans. The furnace is purged with a controlable nitrogen flow. There is no vacuum on the furnace.

The ATV Furnace was installed in the cleanroom in 2014.

The user manual, technical information and contact information can be found in LabManager:

Furnace: ATV

Process information

• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of the ATV furnace and process related parameters

Purpose		Dry oxidation of silicon Annealing in N2 and H2 Pyrolysis of different resists
Performance	Film thickness	Dry SiO2: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide)
Process parameter range	Process Temperature	No vacuum: 25 oC - 1100 oC Vacuum: 25 oC - 1050 oC
	Process pressure	1 atm Vacuum down to ~0.1 mbar
	Gasses on the system	N2 O2 H2
Substrates	Batch size	1-30 50 mm, 100 mm or 150 mm wafers per run 1-50 200 mm wafers per run
	Substrate materials allowed	Depends on furnace tube