Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
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===Deposition rate as a function of deposition time using | ===Deposition rate as a function of deposition time using 1Ox_old:=== | ||
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|99.6 | |99.6 | ||
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===Thickness uniformity of test wafer using the test recipe=== | ===Thickness uniformity of test wafer using the test recipe=== | ||