Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 134: Line 134:




===Deposition rate as a function of deposition time using 1STOxide:===
===Deposition rate as a function of deposition time using 1Ox_old:===
{| border="1" style="text-align: center; width: 400px; height: 150px;"
{| border="1" style="text-align: center; width: 400px; height: 150px;"
|-
|-
Line 168: Line 168:
|99.6
|99.6
|}
|}


===Thickness uniformity of test wafer using the test recipe===
===Thickness uniformity of test wafer using the test recipe===