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Specific Process Knowledge/Lithography/Coaters/Spin Coater: RCD8 processing: Difference between revisions

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Taran (talk | contribs)
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==AZ MiR 701==
==AZ MiR 701==
[[Image:RCD8 AZ 4562.jpg|300x300px|thumb|right|Spin curve for AZ 4562]]
[[Image:RCD8 AZ 4562.jpg|300x300px|thumb|right|Spin curve for AZ 4562]]
Spin coating of AZ 4562 on Spin Coater: RCD8 using manual dispense is a very simple process. The wafer is accelerated at 1000rpm/s to the spin-off speed, spun for 30s, then decelerated at 1000rpm/s.
Spin coating of AZ MiR 701 (29cps) on Spin Coater: RCD8 using manual dispense is a very simple process. The wafer is accelerated at 1000rpm/s to the spin-off speed, spun for 30s, then decelerated at 1000rpm/s.


''Recipe names, process parameters, and test results:''
''Recipe names, process parameters, and test results:''
*'''1 DCH 4562 man disp 10um'''
*'''1 DCH MiR 701 man disp 2um'''
Spin-off: 30 s at 2000 rpm.
Spin-off: 30 s at 2350 rpm.


{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="0" cellpadding="3" style="text-align:left;"  
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
|Silicon with native oxide
|Silicon with native oxide
|9.92 µm
|2.00 µm
|2.9%
|1.8%
|29/4 2015
|29/4 2015
|taran
|taran
|9 points on one wafer, exclusion zone 5mm
|9 points on one wafer, exclusion zone 5mm <br> Non-vacuum chuck
|}
|}