Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions
| Line 116: | Line 116: | ||
|~100 nm/min | |~100 nm/min | ||
| | | | ||
68-69 nm/min (2015-04-24 BGHE)<br> | '''68-69 nm/min''' (2015-04-24 BGHE)<br> | ||
109 ± 2 nm/min [tested: 2014-03-18] | 109 ± 2 nm/min [tested: 2014-03-18] | ||
|- | |- | ||
| Line 122: | Line 122: | ||
|1.47 | |1.47 | ||
| | | | ||
1.463-1.464 (2015-04-24 BGHE)<br> | '''1.463-1.464''' (2015-04-24 BGHE)<br> | ||
1.465 [tested: 2014-03-18] | 1.465 [tested: 2014-03-18] | ||
|- | |- | ||
| Line 128: | Line 128: | ||
|<1 % | |<1 % | ||
| | | | ||
1% over the wafer (2015-04-24 BGHE)<br> | '''1%''' over the wafer (2015-04-24 BGHE)<br> | ||
3.2% over the wafer [tested: 2014-03-18] | 3.2% over the wafer [tested: 2014-03-18] | ||
|} | |} | ||