Revision as of 09:33, 27 April 2015

Spin coating

The process of spin coating on Spin Coater: RCD8 consists of a selection of the following steps:

Acceleration to a low spin speed if dynamic dispense is used
Resist dispense
Closing the Gyrset
Resist spreading at low spin speed
Spin-off
Deceleration
Opening Gyrset

The wafer is first centered on the chuck and held in place by vacuum (or pins in the case of the non-vacuum chuck). If static dispense is used, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist may be dispensed manually, or automatically using the syringe dispense system on the media arm. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.

The spin-off cycle determines the thickness of the resist coating. The thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law (y=k*x^-a). The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.

The coated thickness, t, as a function of the spin-off speed, w, follows an inverse power-law t=k*w^-a. The constant, k, is a function of the resist viscosity and solid content, and the spin-off time. The exponent, a, is dependent on solvent evaporation, and is usually ½. This means that using the thickness t1 achieved at spin speed w1, one can estimate the thickness t2 at spin speed w2 using the relation
t1*w1^2 = t2*w2^2 => t2 = t1 * w1^2/w2^2

@@ Line 1: / Line 1: @@
 =Spin coating=
-The process of spin coating on Spin Track 1 + 2 consists of a selection of the following steps:
+The process of spin coating on Spin Coater: RCD8 consists of a selection of the following steps:
 *Acceleration to a low spin speed if dynamic dispense is used
 *Resist dispense
+*Closing the Gyrset
 *Resist spreading at low spin speed
 *Spin-off
-*Deceleration before stop or further process steps
+*Deceleration
-*Edge-bead removal using PGMEA
+*Opening Gyrset
-*Backside rinse using PGMEA
-The wafer is first centered on the spindle chuck and held in place by vacuum. If static dispense is specified in the process, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist is dispensed through the dispense arm, positioned over the center of the wafer. The resist pump administers a fixed volume of resist (4 ml), but multiple dispenses may be used. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.
+The wafer is first centered on the chuck and held in place by vacuum (or pins in the case of the non-vacuum chuck). If static dispense is used, the spindle remains static during the ensuing resist dispense. In the case of dynamic dispense, the spindle is accelerated to a low spin speed before the resist is dispensed. Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. The resist may be dispensed manually, or automatically using the syringe dispense system on the media arm. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.
 The spin-off cycle determines the thickness of the resist coating. The thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law (y=k*x^-a). The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.
-During spin coating, resist builds up at the edge of the wafer due to the change in surface tension at the edge. This phenomenon is called an edge-bead. Dependent on spin coating parameters, the coating may be several times thicker at the edge than in the central area. In a subsequent hard contact exposure step, this edge-bead induces an undesired proximity gap which reduces the lateral resolution, and may even cause the wafer to stick to the mask. In an edge-bead removal step, solvent administered through a nozzle positioned at the edge of the wafer while spinning at low or medium spin speed dissolves the resist and washes it away. After the removal, a short spin at medium spin speed dries the wafer before the soft bake. Dependent on the viscosity (solvent content) of the resist at the point of edge-bead removal, this drying spin may cause the resist to re-flow and create a secondary edge-bead. In some cases, it may be necessary to (partially) soft bake the resist before edge-bead removal.
+The coated thickness, t, as a function of the spin-off speed, w, follows an inverse power-law t=k*w^-a. The constant, k, is a function of the resist viscosity and solid content, and the spin-off time. The exponent, a, is dependent on solvent evaporation, and is usually ½. This means that using the thickness t1 achieved at spin speed w1, one can estimate the thickness t2 at spin speed w2 using the relation <br> t1*w1^2 = t2*w2^2 => t2 = t1 * w1^2/w2^2 <br>
-Dependent on the spin speeds used in the various steps of the spin coating, resist may creep over the edge of the wafer and onto the backside. Also, some resists tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy". This resist will contaminate the soft bake hotplate, and thus subsequent wafers with resist. In a backside rinse step, solvent administered through a nozzle to the backside of the wafer while spinning at low or medium spin speed dissolves the resist and washes it away. After the rinse, a short spin at medium spin speed dries the wafer before the soft bake. During the backside rinse solvent inevitably creeps onto the front side of the wafer. This effect may be used to dissolve and subsequently remove an edge-bead, but it may also leave the rim of the wafer exposed. As an alternative to backside rinse, a wafer which is left dirty on the backside by the spin coat process may be soft baked in proximity in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.
 =Automatic dispense=