Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
| Line 76: | Line 76: | ||
*'''DCH 150mm SP 60s''' | *'''DCH 150mm SP 60s''' | ||
Each of these sequences start with a 2s pre-wet at 1200 rpm using developer. The puddle dispense is done at a rotation of 30rpm. The dispense time is 3s, and 7s, corresponding to a volume of 11 ml, and 26 ml, for 100mm, and 150mm, respectively. The development (puddle time) is split in two by an agitation step of 2s at 30rpm (one rotation). Spin-off is 3s at 4000rpm. Finally, the wafer is rinsed as described above. | Each of these sequences start with a 2s pre-wet at 1200 rpm using developer. The puddle dispense is done at a rotation of 30rpm. The dispense time is 3s, and 7s, corresponding to a volume of 11 ml, and 26 ml, for 100mm, and 150mm, respectively. The development (puddle time) is split in two by an agitation step of 2s at 30rpm (one rotation). Spin-off is 3s at 4000rpm. Finally, the wafer is rinsed as described above. | ||
*'''DCH 100mm SP 60s no spinoff''' | |||
As DCH 100mm SP 60s except the spin-off step is omitted. The development is thus terminated by the rinse (30s @ 3000rpm). | |||
==Post-exposure baking (PEB)== | ==Post-exposure baking (PEB)== | ||