Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
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! width="100" | Key words | ! width="100" | Key words | ||
|- | |- | ||
! rowspan=" | ! rowspan="5" | Process D <!-- recipe name --> | ||
! Original <!-- step --> | ! Original <!-- step --> | ||
| 0 <!-- chiller temp --> | | 0 <!-- chiller temp --> | ||
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| <!-- keywords --> | | <!-- keywords --> | ||
|- | |- | ||
! | ! New Process D <!-- step --> | ||
| 0 <!-- chiller temp --> | |||
! 1 <!-- dep time --> | |||
| 20 <!-- dep pressure --> | |||
| 150 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 2000 <!-- coil power --> | |||
| 3 <!-- etch time --> | |||
| 26 <!-- etch pressure --> | |||
| 0 <!-- C4F8 flow --> | |||
| 275 <!-- SF6 flow --> | |||
| 5 <!-- O2 flow --> | |||
| 2500 <!-- coil power --> | |||
| 35 <!-- platen power --> | |||
! New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/NewProcessD | 2]] <!-- link processes --> | |||
| <!-- keywords --> | |||
|- | |||
! PrD01 <!-- step --> | |||
| 0 <!-- chiller temp --> | |||
| 1 <!-- dep time --> | |||
| 20 <!-- dep pressure --> | |||
| 150 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 2000 <!-- coil power --> | |||
! 2.4 <!-- etch time --> | |||
| 26 <!-- etch pressure --> | |||
| 0 <!-- C4F8 flow --> | |||
| 275 <!-- SF6 flow --> | |||
| 5 <!-- O2 flow --> | |||
| 2500 <!-- coil power --> | |||
| 35 <!-- platen power --> | |||
| New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/PrD01 | 2]] <!-- link processes --> | |||
| <!-- keywords --> | |||
|- | |||
! PrD02 <!-- step --> | |||
| 0 <!-- chiller temp --> | | 0 <!-- chiller temp --> | ||
! | ! 1.1 <!-- dep time --> | ||
| 20 <!-- dep pressure --> | | 20 <!-- dep pressure --> | ||
| 150 <!-- C4F8 flow --> | | 150 <!-- C4F8 flow --> | ||
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| 2500 <!-- coil power --> | | 2500 <!-- coil power --> | ||
| 35 <!-- platen power --> | | 35 <!-- platen power --> | ||
! New <!-- Showerhead --> | | New <!-- Showerhead --> | ||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/ | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/PrD02 | 2]] <!-- link processes --> | ||
| <!-- keywords --> | |||
|- | |||
! PrD-3 <!-- step --> | |||
| 0 <!-- chiller temp --> | |||
| 1 <!-- dep time --> | |||
| 20 <!-- dep pressure --> | |||
| 150 <!-- C4F8 flow --> | |||
| 0 <!-- SF6 flow --> | |||
| 0 <!-- O2 flow --> | |||
| 2000 <!-- coil power --> | |||
| 2.5 <!-- etch time --> | |||
| 26 <!-- etch pressure --> | |||
| 0 <!-- C4F8 flow --> | |||
| 275 <!-- SF6 flow --> | |||
| 5 <!-- O2 flow --> | |||
| 2500 <!-- coil power --> | |||
| 35 <!-- platen power --> | |||
| New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/PrD-3 | 2]] <!-- link processes --> | |||
| <!-- keywords --> | | <!-- keywords --> | ||
|- | |- | ||
! | ! PrD-4 <!-- step --> | ||
| 0 <!-- chiller temp --> | | 0 <!-- chiller temp --> | ||
| 1 <!-- dep time --> | |||
| 20 <!-- dep pressure --> | | 20 <!-- dep pressure --> | ||
| 150 <!-- C4F8 flow --> | | 150 <!-- C4F8 flow --> | ||
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| 0 <!-- O2 flow --> | | 0 <!-- O2 flow --> | ||
| 2000 <!-- coil power --> | | 2000 <!-- coil power --> | ||
! 2.2 <!-- etch time --> | |||
| 26 <!-- etch pressure --> | | 26 <!-- etch pressure --> | ||
| 0 <!-- C4F8 flow --> | | 0 <!-- C4F8 flow --> | ||
| 275 <!-- SF6 flow --> | | 275 <!-- SF6 flow --> | ||
| | | 5 <!-- O2 flow --> | ||
| 2500 <!-- coil power --> | | 2500 <!-- coil power --> | ||
| 35 <!-- platen power --> | | 35 <!-- platen power --> | ||
| New <!-- Showerhead --> | |||
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/ | | [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessD/PrD-4 | 2]] <!-- link processes --> | ||
| <!-- keywords --> | | <!-- keywords --> | ||
|- | |- |
Revision as of 14:13, 16 January 2015
Comparison of continuous processes
Process | Before (Old showerhead) | After (New showerhead) | |||||
---|---|---|---|---|---|---|---|
Name/Type | Description/parameters | Wafer ID | Comment | SEM images | Wafer ID | Comment | SEM images |
Continuous black silicon recipe on blank wafer | 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen | S004592 | Wafer centre | S004679 | Wafer centre | ||
S003900 | Wafer edge | S004679 | Wafer edge | ||||
Continuous isotropic silicon etch called isoslow7 | 1 minute, 10 degrees, 10 mTorr, 80 SF6, 150 W coil, 3 W platen | S003900 | 4" wafer, 50 % load | S00XXX | No test yet | File:S00XX centre.jpg |
Comparison of switched processes
Process A
Recipe | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
Process A | Step1 11 cyc | 20 | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 90>>150 | 0 | 350(1.5s) 550 | 5 | 2800 | 120>>140(1.5s) 45 | Old | 1 | |
Step2 44 cyc | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 150 | 0 | 350(1.5s) 550 | 5 | 2800 | 140(1.5s) 45 | |||||
Step1 11 cyc | 20 | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 90>>150 | 0 | 350(1.5s) 550 | 5 | 2800 | 120>>140(1.5s) 45 | New | 1 | Profile improved | |
Step2 44 cyc | 4 | 25 | 200 | 0 | 0 | 2000 | 7.0 | 25(1.5s) 150 | 0 | 350(1.5s) 550 | 5 | 2800 | 140(1.5s) 45 |
Process D
Recipe | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
Process D | Original | 0 | 2 | 20 | 150 | 0 | 0 | 2000 | 2.4 | 26 | 0 | 275 | 5 | 2500 | 35 | Old | 1 | |
Original | 0 | 2 | 20 | 150 | 0 | 0 | 2000 | 2.4 | 26 | 0 | 275 | 5 | 2500 | 35 | New | 1 | ||
New Process D | 0 | 1 | 20 | 150 | 0 | 0 | 2000 | 3 | 26 | 0 | 275 | 5 | 2500 | 35 | New | 2 | ||
PrD01 | 0 | 1 | 20 | 150 | 0 | 0 | 2000 | 2.4 | 26 | 0 | 275 | 5 | 2500 | 35 | New | 2 | ||
PrD02 | 0 | 1.1 | 20 | 150 | 0 | 0 | 2000 | 2.4 | 26 | 0 | 275 | 5 | 2500 | 35 | New | 2 | ||
PrD-3 | 0 | 1 | 20 | 150 | 0 | 0 | 2000 | 2.5 | 26 | 0 | 275 | 5 | 2500 | 35 | New | 2 | ||
PrD-4 | 0 | 1 | 20 | 150 | 0 | 0 | 2000 | 2.2 | 26 | 0 | 275 | 5 | 2500 | 35 | New | 2 |
Polysilicon etch
Recipe description | Name | Temp. | Deposition step | Etch step | Comments | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Time | Pres. | C4F8 | SF6 | O2 | Coil | Time | Pres. | C4F8 | SF6 | O2 | Coil | Platen | Showerhead | Runs | Key words | |||
Polysilicon etch | polySi etch DUV mask | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | Old | 1 | Slightly over-etching to ensure complete absence of grass |
polySi etch DUV mask | 30 | 2.3 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
Cpoly1 | 30 | 1.2 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | Very aggressive, unusable | |
Cpoly2 | 30 | 1.4 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
Cpoly3 | 30 | 1.6 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
Cpoly4 | 30 | 1.8 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 | ||
Cpoly5 | 30 | 2.0 | 10 | 50 | 0 | 0 | 600 | 5.0 | 10 | 20 | 60 | 5 | 400 | 40 | New | 1 |