Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

@@ Line 38: / Line 38: @@
 | [[file:S004679 edge.jpg |250px|frameless ]]
 |-
-! rowspan="2" width="100"| Continuous isotropic silicon etch called isoslow7
+! width="100"| Continuous isotropic silicon etch called isoslow7
-| rowspan="2" width="100"| 1 minute, 10 degrees, 10 mTorr, 80 SF<sub>6</sub>, 150 W coil, 3 W platen
+| width="100"| 1 minute, 10 degrees, 10 mTorr, 80 SF<sub>6</sub>, 150 W coil, 3 W platen
 | S003900
 | 4" wafer
@@ Line 53: / Line 53: @@
 | Wafer centre
 | [[file:S00XX centre.jpg |250px|frameless ]]
-|-
-| S00XXXx
-| Wafer edge
-| [[file:S00XXX dge.jpg |250px|frameless ]]
-| S00XXX
-| Wafer edge
-| [[file:S00xxxx edge.jpg |250px|frameless ]]
 |-
 |}