Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

From LabAdviser
Jmli (talk | contribs)
Jmli (talk | contribs)
Line 18: Line 18:
! rowspan="2" width="100"| Continuous black silicon recipe on blank wafer
! rowspan="2" width="100"| Continuous black silicon recipe on blank wafer
| rowspan="2" width="100"| 15 mins, -10 degrees, 32 mtorr, 60 sccm SF<sub>6</sub>, 55 sccm O<sub>2</sub>, 70 W platen
| rowspan="2" width="100"| 15 mins, -10 degrees, 32 mtorr, 60 sccm SF<sub>6</sub>, 55 sccm O<sub>2</sub>, 70 W platen
| S004592
| S003900
| Wafer centre
| Wafer centre
| [[file:S004592 centre.jpg |250px|frameless ]]
|
[[file:S003900-01.jpg |120px|frameless ]]
[[file:S003900-02.jpg |120px|frameless ]]
[[file:S003900-03.jpg |120px|frameless ]]
[[file:S003900-04.jpg |120px|frameless ]]
[[file:S003900-05.jpg |120px|frameless ]]
[[file:S003900-06.jpg |120px|frameless ]]
| S004679
| S004679
| Wafer centre
| Wafer centre
| [[file:S004679 centre.jpg |250px|frameless ]]
| [[file:S004679 centre.jpg |250px|frameless ]]
|-
|-
| S004592
| S003900
| Wafer edge
| Wafer edge
| [[file:S004592 edge.jpg |250px|frameless ]]
| [[file:S004592 edge.jpg |250px|frameless ]]
Line 32: Line 38:
| [[file:S004679 edge.jpg |250px|frameless ]]
| [[file:S004679 edge.jpg |250px|frameless ]]
|-
|-
! rowspan="2" width="100"|  
! rowspan="2" width="100"| Continuous isotropic silicon etch called isoslow7
| rowspan="2" width="100"|  
| rowspan="2" width="100"| 1 minute, 10 degrees, 10 mTorr, 80 SF<sub>6</sub>, 150 W coil, 3 W platen
| S00XXX
| S003900
| 8" wafer
| 4" wafer
|
|
| S00XXX
| S00XXX

Revision as of 15:08, 16 December 2014

Comparison of continuous processes

Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S003900 Wafer centre

S004679 Wafer centre
S003900 Wafer edge S004679 Wafer edge
Continuous isotropic silicon etch called isoslow7 1 minute, 10 degrees, 10 mTorr, 80 SF6, 150 W coil, 3 W platen S003900 4" wafer S00XXX Wafer centre File:S00XX centre.jpg
S00XXXx Wafer edge File:S00XXX dge.jpg S00XXX Wafer edge File:S00xxxx edge.jpg

Comparison of switched processes

Recipe Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Process A Step1 11 cyc 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 Old 1
Step2 44 cyc 4 25 200 0 0 2000 7.0 25(1.5s) 150 0 350(1.5s) 550 5 2800 140(1.5s) 45
Step1 11 cyc 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 New 1
Step2 44 cyc 4 25 200 0 0 2000 7.0 25(1.5s) 150 0 350(1.5s) 550 5 2800 140(1.5s) 45



Recipe description Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Polysilicon etch polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 Old 1 Slightly over-etching to ensure complete absence of grass
polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1 Very aggressive, unusable
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1