Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions
Appearance
| Line 18: | Line 18: | ||
! rowspan="2" width="100"| Continuous black silicon recipe on blank wafer | ! rowspan="2" width="100"| Continuous black silicon recipe on blank wafer | ||
| rowspan="2" width="100"| 15 mins, -10 degrees, 32 mtorr, 60 sccm SF<sub>6</sub>, 55 sccm O<sub>2</sub>, 70 W platen | | rowspan="2" width="100"| 15 mins, -10 degrees, 32 mtorr, 60 sccm SF<sub>6</sub>, 55 sccm O<sub>2</sub>, 70 W platen | ||
| | | S003900 | ||
| Wafer centre | | Wafer centre | ||
| [[file: | | | ||
[[file:S003900-01.jpg |120px|frameless ]] | |||
[[file:S003900-02.jpg |120px|frameless ]] | |||
[[file:S003900-03.jpg |120px|frameless ]] | |||
[[file:S003900-04.jpg |120px|frameless ]] | |||
[[file:S003900-05.jpg |120px|frameless ]] | |||
[[file:S003900-06.jpg |120px|frameless ]] | |||
| S004679 | | S004679 | ||
| Wafer centre | | Wafer centre | ||
| [[file:S004679 centre.jpg |250px|frameless ]] | | [[file:S004679 centre.jpg |250px|frameless ]] | ||
|- | |- | ||
| | | S003900 | ||
| Wafer edge | | Wafer edge | ||
| [[file:S004592 edge.jpg |250px|frameless ]] | | [[file:S004592 edge.jpg |250px|frameless ]] | ||
| Line 32: | Line 38: | ||
| [[file:S004679 edge.jpg |250px|frameless ]] | | [[file:S004679 edge.jpg |250px|frameless ]] | ||
|- | |- | ||
! rowspan="2" width="100"| | ! rowspan="2" width="100"| Continuous isotropic silicon etch called isoslow7 | ||
| rowspan="2" width="100"| | | rowspan="2" width="100"| 1 minute, 10 degrees, 10 mTorr, 80 SF<sub>6</sub>, 150 W coil, 3 W platen | ||
| | | S003900 | ||
| | | 4" wafer | ||
| | | | ||
| S00XXX | | S00XXX | ||