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Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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Jmli (talk | contribs)
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! rowspan="2" width="100"| Continuous black silicon recipe on blank wafer
! rowspan="2" width="100"| Continuous black silicon recipe on blank wafer
| rowspan="2" width="100"| 15 mins, -10 degrees, 32 mtorr, 60 sccm SF<sub>6</sub>, 55 sccm O<sub>2</sub>, 70 W platen
| rowspan="2" width="100"| 15 mins, -10 degrees, 32 mtorr, 60 sccm SF<sub>6</sub>, 55 sccm O<sub>2</sub>, 70 W platen
| S004592
| S003900
| Wafer centre
| Wafer centre
| [[file:S004592 centre.jpg |250px|frameless ]]
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[[file:S003900-01.jpg |120px|frameless ]]
[[file:S003900-02.jpg |120px|frameless ]]
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[[file:S003900-05.jpg |120px|frameless ]]
[[file:S003900-06.jpg |120px|frameless ]]
| S004679
| S004679
| Wafer centre
| Wafer centre
| [[file:S004679 centre.jpg |250px|frameless ]]
| [[file:S004679 centre.jpg |250px|frameless ]]
|-
|-
| S004592
| S003900
| Wafer edge
| Wafer edge
| [[file:S004592 edge.jpg |250px|frameless ]]
| [[file:S004592 edge.jpg |250px|frameless ]]
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| [[file:S004679 edge.jpg |250px|frameless ]]
| [[file:S004679 edge.jpg |250px|frameless ]]
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! rowspan="2" width="100"|  
! rowspan="2" width="100"| Continuous isotropic silicon etch called isoslow7
| rowspan="2" width="100"|  
| rowspan="2" width="100"| 1 minute, 10 degrees, 10 mTorr, 80 SF<sub>6</sub>, 150 W coil, 3 W platen
| S00XXX
| S003900
| 8" wafer
| 4" wafer
|
|
| S00XXX
| S00XXX