Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange: Difference between revisions

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Line 79: Line 79:
! width="100" | Key words
! width="100" | Key words
|-
|-
! rowspan="7" | Polysilicon etch   <!-- recipe name -->
! rowspan="7" | Process A   <!-- recipe name -->
! polySi etch DUV mask  <!-- step -->
! Step 1 <!-- step -->
| 30       <!-- chiller temp -->
| 20       <!-- chiller temp -->
! 2.3       <!-- dep time -->
! 4       <!-- dep time -->
| 10       <!-- dep pressure -->
| 25       <!-- dep pressure -->
| 50       <!-- C4F8 flow -->
| 200       <!-- C4F8 flow -->
| 0      <!-- SF6 flow -->
| 0      <!-- SF6 flow -->
| 0    <!-- O2 flow -->
| 0    <!-- O2 flow -->
| 600       <!-- coil power -->
| 2000       <!-- coil power -->
| 5.0      <!-- etch time -->
| 7.0      <!-- etch time -->
| 10       <!-- etch pressure -->
| 25(1.5s) 90>>150       <!-- etch pressure -->
| 20       <!-- C4F8 flow -->
| 0       <!-- C4F8 flow -->
| 60       <!-- SF6 flow -->
| 350(1.5s) 550       <!-- SF6 flow -->
| 5      <!-- O2 flow -->
| 5      <!-- O2 flow -->
| 400       <!-- coil power -->
| 2800       <!-- coil power -->
| 40     <!-- platen power -->
| 120>>140(1.5s) 45     <!-- platen power -->
! Old      <!-- Showerhead -->
! Old      <!-- Showerhead -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/polySi/Cduv | 1]]      <!-- link processes -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/showerheadchange/ProcessA | 1]]      <!-- link processes -->
| Slightly over-etching to ensure complete absence of grass  <!-- keywords -->
|   <!-- keywords -->
|-
|-
| polySi etch DUV mask  <!-- step -->
| polySi etch DUV mask  <!-- step -->

Revision as of 09:29, 16 December 2014

Comparison of continuous processes

Process Before After
Name/Type Description Wafer ID Comment SEM images Wafer ID Comment SEM images
Continuous black silicon recipe on blank wafer 15 mins, -10 degrees, 32 mtorr, 60 sccm SF6, 55 sccm O2, 70 W platen S004592 Wafer centre S004679 Wafer centre
S004592 Wafer edge S004679 Wafer edge
S00XXX 8" wafer S00XXX Wafer centre File:S00XX centre.jpg
S00XXXx Wafer edge File:S00XXX dge.jpg S00XXX Wafer edge File:S00xxxx edge.jpg

Comparison of switched processes

Recipe description Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Process A Step 1 20 4 25 200 0 0 2000 7.0 25(1.5s) 90>>150 0 350(1.5s) 550 5 2800 120>>140(1.5s) 45 Old 1
polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1 Very aggressive, unusable
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1



Recipe description Name Temp. Deposition step Etch step Comments
Time Pres. C4F8 SF6 O2 Coil Time Pres. C4F8 SF6 O2 Coil Platen Showerhead Runs Key words
Polysilicon etch polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 Old 1 Slightly over-etching to ensure complete absence of grass
polySi etch DUV mask 30 2.3 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly1 30 1.2 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1 Very aggressive, unusable
Cpoly2 30 1.4 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly3 30 1.6 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly4 30 1.8 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
Cpoly5 30 2.0 10 50 0 0 600 5.0 10 20 60 5 400 40 New 1
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