Specific Process Knowledge/Doping: Difference between revisions
| Line 22: | Line 22: | ||
==Comparison of different doping processes== | ==Comparison of different doping processes== | ||
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" | {|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" valign="top" | ||
|- | |- | ||
|- | |- | ||
|-style="background:silver; color:black" | |-style="background:silver; color:black" valign="top" | ||
! | ! | ||
![[Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace|Phosphorous predep]] | ![[Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace|Phosphorous predep]] | ||
| Line 36: | Line 36: | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" valign="top" | ||
!Generel description | !Generel description | ||
|Dopants introduced by diffusion from gas-phase (POCl<sub>3</sub>). A thin phosphorous glass is formed on the substrate and phosphorous atoms are driven in. The phosphorous glass is afterward removed by a short BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done at 800°C - 1150°C in either high temperature annealing furnaces or by rapid thermal annealing. | |Dopants introduced by diffusion from gas-phase (POCl<sub>3</sub>). A thin phosphorous glass is formed on the substrate and phosphorous atoms are driven in. The phosphorous glass is afterward removed by a short BHF etch. Often further annealing is desired in order to redistribute the dopants in the material. This is done at 800°C - 1150°C in either high temperature annealing furnaces or by rapid thermal annealing. | ||
| Line 46: | Line 46: | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" valign="top" | ||
!Process Temperature | !Process Temperature | ||
| | | | ||
| Line 61: | Line 61: | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" valign="top" | ||
!Dopant | !Dopant | ||
| | | | ||
| Line 75: | Line 75: | ||
*Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | *Boron (B<sub>2</sub>H<sub>6</sub> or BCl<sub>3</sub>) | ||
| | | | ||
*See http://www.ion-beam-services.com/about_us.htm | *See more info at [[http://www.ion-beam-services.com/about_us.htm|IBS]] | ||
|- | |- | ||
|- | |- | ||
|-style="background:LightGrey; color:black" | |-style="background:LightGrey; color:black" valign="top" | ||
!Substrate size | !Substrate size | ||
| | | | ||
| Line 101: | Line 101: | ||
|- | |- | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" valign="top" | ||
!'''Allowed materials''' | !'''Allowed materials''' | ||
| | | | ||