Jump to content

Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

← Older editNewer edit →
VisualWikitext
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,526 edits
Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,526 edits
Line 2: Line 2:


=General Process Information=
=General Process Information=
Processing using Spin Track 1 + 2 is divided into three parts:
Processing on Developer TMAH UV-lithography consists of the following steps:  
*HMDS priming
*Post-exposure bake
*Spin coating
*Puddle development
*Soft baking
*Rinse
As part of the processing of negative tone resists and chemically amplified positive tone resists, Spin Track 2 may also be used for:
 
*Post-exposure baking (at 110°C)
'''Features of Developer TMAH UV-lithography:'''
'''Features of Spin Track 1 + 2:'''
*Cassette-to-cassette wafer handling
*Cassette-to-cassette wafer handling
*In-line HMDS priming
*In-line hotplates
*Temperature controlled resist lines
*In-line cool plate
The resist lines are temperature controlled using 25°C water from a chiller. The priming module coolplate is cooled by the same chiller. If the process flow has been properly designed, the wafer and resist should have the same temperature during spin coating, ensuring good coating reproducibility.  
*Puddle developer module with rinse and dry
 
 
==Post-exposure baking==
Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, is carried out on one of the two hotplates. After baking, the wafer is cooled for 20 seconds on the 20°C cool plate.


==Puddle Development==
==Puddle Development==
The process of development
Development on Developer TMAH UV-lithography is divided into the following steps: Pre-wet, puddle dispense, development, spin-off, and finally rinse and dry.


==Rinse==
==Rinse==
Line 21: Line 24:


The standard rinse and dry procedure is 30s at 4000rpm with DIW being administered from the top at the center of the substrate, followed by a 10-15s dry using nitrogen from the top at the center of the substrate. The top side rinse is at a rate of approximately 500 ml/min, corresponding to 250 ml DIW during the rinse. The flow rate of the nitrogen is 50 l/min, and the drying time is set according to the size of the substrate.
The standard rinse and dry procedure is 30s at 4000rpm with DIW being administered from the top at the center of the substrate, followed by a 10-15s dry using nitrogen from the top at the center of the substrate. The top side rinse is at a rate of approximately 500 ml/min, corresponding to 250 ml DIW during the rinse. The flow rate of the nitrogen is 50 l/min, and the drying time is set according to the size of the substrate.
==Post-exposure baking==
Chemically amplified resists and cross-linking negative resists must be baked after exposure in order to finish the process initiated by the exposure light. Post-exposure bake, or PEB, is carried out on one of the two hotplates. After baking, the wafer is cooled for 20 seconds on the 20°C coolplate.


=Standard Processes=
=Standard Processes=
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing"