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| ===Process information=== | | ===Process information=== |
| The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch. Unless otherwise stated, the exposure doses given here are for standard silicon wafers. | | The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm. Dependent on the spectral sensitivity of the resist, the optimal dose may be increased compared to broadband exposure on the Aligner-6inch. |
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| *[[Specific Process Knowledge/Lithography/UVExposure/UVExposure dose|Information on UV exposure dose]] | | *[[Specific Process Knowledge/Lithography/UVExposure/UVExposure dose|Information on UV exposure dose]] |
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| '''Positive tone resists:'''
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| '''AZ 5214E and AZ 4562'''
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| Compared to exposure on Aligner-6inch, the dose on KS-Aligner is doubled.
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| *1.5µm: 35-49 mJ/cm<sup>2</sup> corresponding to 5-7 seconds exposure at 7 mW/cm<sup>2</sup>.
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| *2.2µm: 56-70 mJ/cm<sup>2</sup> corresponding to 8-10 seconds exposure at 7 mW/cm<sup>2</sup>.
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| *4.2µm: ~140 mJ/cm<sup>2</sup> corresponding to ~20 seconds exposure at 7 mW/cm<sup>2</sup>.
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| *10µm: ~280 mJ/cm<sup>2</sup> corresponding to ~40 seconds exposure at 7 mW/cm<sup>2</sup>. Multiple exposure with 10s pauses is recommended.
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| '''AZ MiR 701''' ''Preliminary results''
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| Compared to exposure on Aligner-6inch, the dose on KS-Aligner is five-doubled.
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| *1.5µm: 157.5 mJ/cm<sup>2</sup> corresponding to 22.5 seconds exposure at 7 mW/cm<sup>2</sup>.
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| '''Negative tone resists'''
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| '''AZ 5214E image reversal'''
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| Compared to exposure on Aligner-6inch, the dose on KS-Aligner is doubled.
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| *1.5µm: 21 mJ/cm<sup>2</sup> corresponding to 3 seconds exposure at 7 mW/cm<sup>2</sup>.
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| *1.5µm resist on boron glass: around 7 sec (49 mJ/cm<sup>2</sup>) (supplied March 2013 by Morten Bo Lindholm Mikkelsen, DTU Nanotech).
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| *2.2µm: 24 mJ/cm<sup>2</sup> corresponding to 3.4 seconds exposure at 7 mW/cm<sup>2</sup>.
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| Flood exposure after reversal bake: 210 mJ/cm<sup>2</sup> corresponding to 30 seconds exposure at 7 mW/cm<sup>2</sup>.
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| '''AZ nLOF 20XX''' ''Preliminary results''
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| Compared to exposure on Aligner-6inch, the dose on KS-Aligner is the same.
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| *1.5µm: 42 mJ/cm<sup>2</sup> corresponding to 6 seconds exposure at 7 mW/cm<sup>2</sup>.
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| *2µm: 49 mJ/cm<sup>2</sup> corresponding to 7 seconds exposure at 7 mW/cm<sup>2</sup>.
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| *3µm: 56 mJ/cm<sup>2</sup> corresponding to 8 seconds exposure at 7 mW/cm<sup>2</sup>.
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| *4.3µm: 70 mJ/cm<sup>2</sup> corresponding to 10 seconds exposure at 7 mW/cm<sup>2</sup>.
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| <br clear="all" />
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| === Equipment performance and process related parameters ===
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| {| border="2" cellspacing="0" cellpadding="2"
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| !style="background:silver; color:black;" align="center" width="60"|Purpose
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| |style="background:LightGrey; color:black"|
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| Alignment and UV exposure
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| |-
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| !style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
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| |style="background:LightGrey; color:black"|Exposure mode
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| soft contact, hard contact, proximity, flood exposure
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| |-
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| | style="background:LightGrey; color:black"|Exposure light/filters
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| *365 nm (i-line), light intensity 7,0 mW/cm<sup>2</sup> in Constant Intansity (CI2) mode
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| *303 nm filters optional
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| |-
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| |style="background:LightGrey; color:black"|Minimum structure size
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| down to 1µm
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| |-
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| |style="background:LightGrey; color:black"|Mask size
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| *5x5inch
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| *7x7inch
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| |-
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| |style="background:LightGrey; color:black"|Alignment modes
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| *Top Side Alignment(TSA)
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| *Bottom Side Alignment(BSA)
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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| |style="background:LightGrey; color:black"|Substrate size
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| * 50 mm wafers
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| * 110 mm wafers
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| * 150 mm wafers
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| |-
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| | style="background:LightGrey; color:black"|Allowed materials
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| * All cleanroom materals
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| * III-V materials chuck optinal
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| |-
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| |style="background:LightGrey; color:black"|Batch
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| |style="background:WhiteSmoke; color:black" align="center" colspan="2"|
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| 1
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| |-
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| |}
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| <br clear="all" /> | | <br clear="all" /> |
