Specific Process Knowledge/Doping: Difference between revisions
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![[Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace|Phosphor predep]] | ![[Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace|Phosphor predep]] | ||
![[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron predep]] | ![[Specific_Process_Knowledge/Thermal_Process/A1_Bor_Drive-in_furnace|Boron predep]] | ||
![[Specific Process Knowledge/Thin_film_deposition/PECVD|PECVD doped thin film]] | |||
![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped Poly Si]] | ![[Specific Process Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon|Doped Poly Si]] | ||
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|Dopants introduced by diffusion from gas-phase (POCL) | |Dopants introduced by diffusion from gas-phase (POCL) | ||
|Dopants introduced by diffusion from solid source wafers | |Dopants introduced by diffusion from solid source wafers | ||
|Deposition of doped thin film (oxides or nitrides) | |||
|Dopants introduced by in-situ doping of poly/amorphous Si | |Dopants introduced by in-situ doping of poly/amorphous Si | ||
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*<nowiki>#</nowiki> 100 mm wafers | *<nowiki>#</nowiki> 100 mm wafers | ||
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*<nowiki>#</nowiki> small samples | *<nowiki>#</nowiki> small samples | ||
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*<nowiki>#</nowiki> 100 mm wafers | *<nowiki>#</nowiki> 100 mm wafers | ||
*<nowiki>#</nowiki> 150 mm wafers | *<nowiki>#</nowiki> 150 mm wafers | ||
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*<nowiki>#</nowiki> 100 mm wafers (Boron and Phosphor) | |||
*<nowiki>#</nowiki> 150 mm wafers (only Boron) | |||
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Revision as of 15:31, 6 October 2014
THIS PAGE IS UNDER CONSTRUCTION
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Doping your wafer
This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.
- PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
- Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
- Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
- Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
- Ion implantation
Comparison method 1 and method 2 for the process
| Phosphor predep | Boron predep | PECVD doped thin film | Doped Poly Si | |
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| Generel description | Dopants introduced by diffusion from gas-phase (POCL) | Dopants introduced by diffusion from solid source wafers | Deposition of doped thin film (oxides or nitrides) | Dopants introduced by in-situ doping of poly/amorphous Si |
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| Parameter 2 |
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| Substrate size |
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| Allowed materials |
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Ion implantation
Ion beam implantation cannot be done at Danchip. IBS offers ion-beam implantation as a service. See more at: http://www.ion-beam-services.com/about_us.htm