Specific Process Knowledge/Doping: Difference between revisions
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*<nowiki>#</nowiki> 100 mm wafers | *<nowiki>#</nowiki> 100 mm wafers | ||
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*<nowiki>#</nowiki> 100 mm wafers | *<nowiki>#</nowiki> 100 mm wafers | ||
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*<nowiki>#</nowiki> 100 mm wafers (Boron and Phosphor) | |||
*<nowiki>#</nowiki> 150 mm wafers (only Boron) | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
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*<nowiki>#</nowiki> small samples | *<nowiki>#</nowiki> small samples | ||
Revision as of 14:29, 6 October 2014
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Doping your wafer
This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.
- PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
- Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
- Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
- Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
- Ion implantation
Comparison method 1 and method 2 for the process
| Phosphor predep | Boron predep | Doped Poly Si | PECVD doped thin film | |
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| Generel description | Dopants introduced by diffusion from gas-phase (POCL) | Dopants introduced by diffusion from solid source wafers | Dopants introduced by in-situ doping of poly/amorphous Si | Deposition of doped thin film (oxides or nitrides) |
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Ion implantation
Ion beam implantation cannot be done at Danchip. IBS offers ion-beam implantation as a service. See more at: http://www.ion-beam-services.com/about_us.htm