Specific Process Knowledge/Doping: Difference between revisions
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!Generel description | !Generel description | ||
|Dopants introduced by | |Dopants introduced by diffusion from gas-phase (POCL) | ||
|Dopants introduced by | |Dopants introduced by diffusion from solid source wafers | ||
|Dopants introduced by in-situ doping of poly/amorphous Si | |Dopants introduced by in-situ doping of poly/amorphous Si | ||
|Deposition of doped thin film ( | |Deposition of doped thin film (oxides or nitrides) | ||
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*A | *A | ||
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!Substrate size | !Substrate size | ||
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*<nowiki>#</nowiki> small samples | |||
*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
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*<nowiki>#</nowiki> small samples | |||
*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
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*<nowiki>#</nowiki> small samples | *<nowiki>#</nowiki> small samples | ||
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*Allowed material 1 | *Allowed material 1 | ||
*Allowed material 2 | *Allowed material 2 | ||
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*Allowed material 1 | |||
*Allowed material 2 | |||
*Allowed material 3 | |||
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*Allowed material 1 | |||
*Allowed material 2 | |||
*Allowed material 3 | |||
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*Allowed material 1 | *Allowed material 1 | ||
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===Ion implantation=== | ===Ion implantation=== | ||
Ion beam implantation cannot be done at Danchip. IBS offers ion-beam implantation as a service See more at: http://www.ion-beam-services.com/about_us.htm | |||