Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace

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Anneal-bond furnace (C3)

Anneal-bond furnace (C3). Positioned in cleanroom B-1

The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (bonded) silicon wafers.

This furnace is the third furnace tube in the furnace C-stack positioned in cleanroom B-1.

In this furnace it is allowed oxidize and anneal wafers without doing an RCA clean first. Also bonded wafers comming directly from the EVG NIL (assuming they were clean and not have been exposed to any metal when entering EVG NIL) can be processed in the furnace. Check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Anneal-bond Furnace (C3)

Process knowledge

• Oxidation: look at the Oxidation page
• Annealing: look at the Annealing page

Overview of the performance of Anneal Bond furnace and some process related parameters

Purpose	Oxidation of Si wafers Annealing of processed wafers, eg. bonded wafers from EVG NIL	Oxidation: Dry Wet: with bubbler (water steam + O2)
Performance	Film thickness	Dry SiO2: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide) Wet SiO2: 50 Å to ~5 µm (it takes too long to grow a thicker oxide)
Process parameter range	Process temperature	800-1150 oC
	Process pressure	1 atm
	Gas flows	N2: 0-10 slm O2: 0-10 slm
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers) per run
	Substrate materials allowed	Silicon wafers (new wafers or RCA cleaned wafers) Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned) Wafers from the LPCVD furnaces Wafers from EVG NIL (assuming they were clean and not have been exposed to any metal when entering the EVG NIL)