Specific Process Knowledge/Doping: Difference between revisions

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[[/Deposition of silicon nitride using LPCVD|Process description using method 1]]
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*[[/Deposition of silicon nitride using LPCVD|Process description using method 2]]
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===Ion implantation===
Cannot be done at Danchip. We recommend ...

Revision as of 09:04, 1 July 2014

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Doping your wafer

This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.

  • PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
  • Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
  • Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
  • Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in




Comparison method 1 and method 2 for the process

Method 1 Method 2
Generel description Generel description - method 1 Generel description - method 2
Parameter 1
  • A
  • B
  • A
  • B
Parameter 2
  • A
  • B
  • C
  • A
Substrate size
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
  • # small samples
  • # 50 mm wafers
  • # 100 mm wafers
  • # 150 mm wafers
Allowed materials
  • Allowed material 1
  • Allowed material 2
  • Allowed material 1
  • Allowed material 2
  • Allowed material 3



Ion implantation

Cannot be done at Danchip. We recommend ...