Revision as of 09:04, 1 July 2014

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This page is about doping your wafer or making a thin film layer doped with boron, phosphor or Germane.

PECVD - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
Furnace LPCVD PolySilicon - Deposition of PolySi doped with B or P
Dope with Boron - Doping Silicon wafers with boron by thermal predeposition and drive-in
Dope with Phosphorus - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in

	Method 1	Method 2
Generel description	Generel description - method 1	Generel description - method 2
Parameter 1	A B	A B
Parameter 2	A B C	A
Substrate size	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers	# small samples # 50 mm wafers # 100 mm wafers # 150 mm wafers
Allowed materials	Allowed material 1 Allowed material 2	Allowed material 1 Allowed material 2 Allowed material 3

@@ Line 11: / Line 11: @@
 *[[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] - Making boron glass (BSG), phosphorus glass (PSG), boron-phosphorus glass PBSG or germanium doped glass
+*[[Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon|Furnace LPCVD PolySilicon]] - Deposition of PolySi doped with B or P
+*[[Specific Process Knowledge/Thermal Process/Dope with Boron|Dope with Boron]] - Doping Silicon wafers with boron by thermal predeposition and drive-in
+*[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]] - Doping Silicon wafers with phosphorus by thermal predeposition and drive-in
 [[/Deposition of silicon nitride using LPCVD|Process description using method 1]]