Jump to content

Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using PECVD: Difference between revisions

← Older editNewer edit →
VisualWikitext
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
No edit summary
Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,317 edits
Line 6: Line 6:
=Recipes on PECVD2 for deposition of silicon oxides=
=Recipes on PECVD2 for deposition of silicon oxides=
See [[Specific Process Knowledge/III-V Process/thin film dep/pecvd2| here]]
See [[Specific Process Knowledge/III-V Process/thin film dep/pecvd2| here]]
==Quality control recipe==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for PECVD2'''
|-
|
*[http://labmanager.danchip.dtu.dk/d4Show.php?id=1988&mach=17 The QC procedure for PECVD2]<br>
*[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=17 The newest QC data for PECVD2]
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
! QC Recipe:
! QCTOXIDE
|-
| SiH<sub>4</sub> flow
|12 sccm
|-
|N<sub>2</sub>O flow
|710 sccm
|-
|N<sub>2</sub> flow
|392 sccm
|-
|Pressure
|550 mTorr
|-
|RF-power
|100 W @380kHz
|-
|Deposition time
|1 min
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!PECVD2
|-
|Depostion rate of Silicon Oxide
|69nm/min - 119nm/min
|-
|Non-uniformity of the deposition rate (std. deviation of 9 points)
|0 - 2.8 nm
|-
|Refractive index of the Silicon Oxide
|1.41 - 1.53
|-
|Non-uniformity of the refrative index (std. deviation of 9 points)
|0 - 0.07
|-
|}
|-
|}
|}
==SiO2 Standard, High Rate==
{| border="1" style="text-align: center; width: 400px; height: 150px;"
! colspan="2" style="text-align: center;" style="background: #efefef;" | SiO2 Standard
|-
!N<math>_2</math>O-flow
|1600 sccm
|-
!SiH<math>_4</math>-flow
|17 sccm
|-
!RF-power (380 kHz)
|380 W
|-
!Process Pressure
|400 mTorr
|-
!Deposition rate
|179 nm/min
|-
!index of refraction
|1.461
|}
==SiO2 Standard, Low Rate==
{| border="1" style="text-align: center; width: 700px; height: 150px;"
! colspan="2" style="text-align: left;" style="background: #efefef;" | 1STOxide
! colspan="2" style="text-align: left;" style="background: #efefef;" | A test recipe
|-
!N<math>_2</math>-flow
|392 sccm
|392 sccm
|-
!N<math>_2</math>O-flow
|1420 sccm (setting in software is 710 sccm)
|1420 sccm (setting in software is 710 sccm)
|-
!SiH<math>_4</math>-flow
|12 sccm
|12 sccm
|-
!RF-power
|100 W
|150 W
|-
!Process Pressure
|550 mTorr
|700 mTorr
|-
!Deposition rate
|~100 nm/min
|109 &plusmn; 2 nm/min [tested: 2014-03-18]
|-
!index of refraction
|1.47
|1.465 [tested: 2014-03-18]
|-
!Uniformity
|<1 %
|3.2% over the wafer [tested: 2014-03-18]
|}
===Deposition rate as a function of deposition time using 1STOxide:===
{| border="1" style="text-align: center; width: 400px; height: 150px;"
|-
|
Deposition time [s]
|Oxide thickness [nm]
|Expected naturally grown oxide [nm]
|Deposition rate [nm/min]
|-
|15
|26.9
|2
|99.6
|-
|30
|51.9
|2
|99.8
|-
|60
|102.4
|2
|100.4
|-
|60
|102.7
|2
|100.7
|-
|120
|201.1
|2
|99.6
|}
===Thickness uniformity of test wafer using the test recipe===
[[image:PECVD2 SiO2 Test20 wafer map.jpg|350x350px|left|thumb|Thickness uniformity of test wafer using the test recipe.]]
<br clear="all" />
==Silicon nitride==
{| border="1" cellspacing="0" cellpadding="7"
|-
|Recipe name
|SiH4 flow [sccm]
|NH3 flow [sccm]
|N2 flow [sccm]
|Pressure [mTorr]
|Power [W]
|Description
|-
|1nitride
|30
|20
|1000
|500
|80
|
|-
|}


=Recipes on PECVD3 for deposition of silicon oxides=
=Recipes on PECVD3 for deposition of silicon oxides=
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_PECVD"