Specific Process Knowledge/Lithography/Development: Difference between revisions

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==Developer-TMAH==
==Developer-TMAH==
[[Image:KSspinner.JPG|300×300px|right|thumb|Developer-TMAH located in C-1]]
[[Image:KSspinner.JPG|300×300px|right|thumb|Developer-TMAH is located in C-1]]


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Revision as of 17:07, 24 March 2014

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THIS PAGE IS UNDER CONSTRUCTION

Coaters: Comparison Table

Equipment Developer 1 and 2 Developer-6inch SU8-Developer Developer-TMAH
Purpose
  • Coating and baking of
    • AZ5214E resist
    • AZ4562 resist
    • E-beam resist
  • Coating and baking of
    • AZ5214E resist
    • AZ4562 resist
    • SU8 resist
  • Coating and baking of
    • SU8 resist
  • In-line substrate HMDS priming
  • Coating and baking of
    • AZ MiR 701 (29cps) resist
    • AZ nLOF 2020 resist
  • Post-exposure baking at 110°C
Performance Substrate handling
  • Cassette-to-cassette
  • Edge handling chuck
  • Single substrate
  • Non-vacuum chuck for fragile substrates
  • Cassette-to-cassette
Permanent media
  • AZ5214E resist
  • AZ4562 resist
  • Acetone for chuck cleaning
  • Acetone for drip pan
  • AZ5214E resist
  • PGMEA for edge bead removal
  • Acetone for chuck cleaning
  • AZ MiR 701 (29cps) resist
  • AZ nLOF 2020 resist
  • PGMEA for backside rinse and edge-bead removal
  • PGMEA for spinner bowl cleaning and vapor tip bath
Manual dispense option
  • 2 automatic syringes
  • yes
  • pneumatic dispense for SU8 resist
  • no
Process parameter range Spindle speed
  • 100-5000 rpm
  • 100-5000 rpm
  • 10 - 9990 rpm
Gyrset
  • optinal
  • optinal
  • no
Substrates Substrate size
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafer
  • 150 mm wafer
  • 100 mm wafers
  • 150 mm wafers (tool change required)
Batch size
  • 1-24
  • 1
  • 1-25
Allowed materials
  • All cleanroom materials except III-V materials
  • All cleanroom materials except III-V materials
  • Silicon
  • Glass


Developer-1 and Developer-2

Developer-1 (right) and Developer-2 (left) located in C-1

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Developer-1 and Developer-2

The user APV, and contact information can be found in LabManager: Developer-1 Developer-2

Process information

  • Before using one of developer baths, please check the "Litho4_Dev-7up-KOH" logbook to find out when they were last used. A fresh bath can be reused without problems.
  • The main rule is a developer made yesterday must be changed.
  • Rinse substrates with water for 4-5 min. after development.
  • Spin-dry substrates or dry with nitrogen gun after rinsing.

Standard development time using vigorous agitation:

AZ 5214E:

  • 1.5µm resist: 60 sec
  • 2.2µm resist: 70 sec
  • 4.2µm resist: 3 min

AZ 4562:

  • 10µm resist: 5 min

Procedure for making a new developer

1. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood.

2. Fill the bath with the developer mixture and heat it to 22 °C before use.

Equipment performance and process related parameters

Purpose

Development of

  • AZ 5214E
  • AZ 4562
Developer

AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)

Method

Submersion

Process parameters Temperature

22°C

Agitation

Manual

Substrates Substrate size
  • 100 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Batch

1-8


Developer-6inch

The Developer-6inch bench situated in E-5

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Spin Track 1 + 2 is an SVG 88 series track system from Rite Track. Each track consists of a HMDS priming module, a spin coating module, and a baking module. In fact, the only difference between the two tracks is the resist used in the spin coating module. Spin Track 1 + 2 is capable of handling 150 mm wafers, as well as 100 mm wafers, but is currently set up for 100 mm wafer processing.

The Spin Track 1 + 2 is controlled using the Recipe Manager software via the touchscreen on the arm attached to the lefthand end of the track. Recipes for the individual modules are developed by Danchip and combined into flows. The user selects a flow (specific to track 1 or 2), and the appropriate recipes will be downloaded and executed on the appropriate track. The other track runs an empty process (no wafers needed), and can unfortunately not be used by a second user while the first user is processing.

The user manual, user APV, and contact information can be found in LabManager

Process information

Standard development time:

AZ 5214E:

  • 1.5µm resist: 60 sec

Equipment performance and process related parameters

Purpose

Development of

  • AZ 5214E
  • AZ 4562
Developer

AZ 351B diluted 1:5 in water

(NaOH and sodium borate salt)

Method

Submersion

Process parameters Temperature

22°C

Agitation

Circulation and mechanical

Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Batch

1-25


SU8-Developer

The SU8-Developer bench situated in C-1

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The SU8-Developer bench is a manually operated chemical bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). After development, the substrates are rinsed with IPA and dried in the bench.

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose

Development of

  • SU-8
Developer

mr-Dev 600

(PGMEA)

Method

Submersion

Process parameters Temperature

Room temperature

Agitation

Magnetic stirrer

Substrates Substrate size
  • 100 mm wafers
Allowed materials

Silicon and glass substrates

Film or pattern of all but Type IV

Batch

1-8


Developer-TMAH

Developer-TMAH is located in C-1

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Developer-TMAH is a manually operated, single substrate spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in water with a small amount of wetting agent).

The user manual, user APV, and contact information can be found in LabManager

Equipment performance and process related parameters

Purpose

Development of

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
Developer

AZ 726 MIF

(2.38% TMAH in water)

Method

Puddle

Process parameters Temperature

Room temperature

Agitation

none

Substrates Substrate size
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon, glass, and polymer substrates

Film or pattern of all types

Batch

1