Specific Process Knowledge/Lithography/Development: Difference between revisions
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*Before using a one of developer batch's please check the "Litho4_Dev-7up-KOH" logbook to find out when they were used last time. A fresh bath can be reused without problems. | *Before using a one of developer batch's please check the "Litho4_Dev-7up-KOH" logbook to find out when they were used last time. A fresh bath can be reused without problems. | ||
*The main rule is | *The main rule is a developer from yesterday must be changed. | ||
*Substrates | *Substrates are rinsed with water for 4-5 min. after development. | ||
*Substrates can been spin-dried or dried with nitrogen gun after the rinse. | *Substrates can been spin-dried or dried with nitrogen gun after the rinse. | ||
''Standard development times'' | |||
AZ 5214E: | |||
*1.5µm resist is 60 sec | *1.5µm resist is 60 sec | ||
*2.2µm resist is 70 sec | *2.2µm resist is 70 sec | ||
*4.2µm resist is 3 min | *4.2µm resist is 3 min | ||
AZ 4562: | |||
*10µm resist is 5 min | *10µm resist is 5 min | ||