Specific Process Knowledge/Lithography/Baking: Difference between revisions
(→Ovens) |
No edit summary |
||
| Line 5: | Line 5: | ||
==90 C 4" hotplate== | ==90 C 4" hotplate== | ||
[[Image:90_degrees_hotplate_cr3.jpg|200x200px|thumb|Hotplate 90 degrees: positioned in C-1]] | [[Image:90_degrees_hotplate_cr3.jpg|200x200px|thumb|Hotplate 90 degrees: positioned in C-1]] | ||
This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist. | |||
<br clear="all" /> | <br clear="all" /> | ||
== | ==110 C 4" hotplate== | ||
[[Image: | [[Image:Hotplate_110_degrees_cr3.jpg|200x200px|thumb|Hotplate 110 degrees: positioned in C-1]] | ||
The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec. | |||
<br clear="all" /> | <br clear="all" /> | ||
| Line 23: | Line 23: | ||
==90 C oven== | ==90 C oven== | ||
[[Image:Oven_90_degrees_cr3.jpg|200x200px|thumb|Oven 90 | [[Image:Oven_90_degrees_cr3.jpg|200x200px|thumb|Oven 90 °C: positioned in C-1]] | ||
The oven is mostly used for baking of several wafers at a time at 90 | The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min. | ||
<br clear="all" /> | <br clear="all" /> | ||
==120 C oven== | ==120 C oven== | ||
[[Image:Oven_120_degrees_cr3.jpg|200x200px|thumb|Oven 120 | [[Image:Oven_120_degrees_cr3.jpg|200x200px|thumb|Oven 120 °C: positioned in C-1]] | ||
120 | 120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min. | ||
<br clear="all" /> | <br clear="all" /> | ||
==250 C oven for pretreatment== | ==250 C oven for pretreatment== | ||
[[Image:Oven_250_degrees__for_pretreatment_cr3.jpg|200x200px|thumb|Oven 250 | [[Image:Oven_250_degrees__for_pretreatment_cr3.jpg|200x200px|thumb|Oven 250 °C for pretreatment: positioned in C-1]] | ||
The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, better | The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap. | ||
<br clear="all" /> | <br clear="all" /> | ||
==250 C oven for burning resist== | ==250 C oven for burning resist== | ||
[[Image:Oven_250_degrees_for_burning_resist_cr3.jpg|200x200px|thumb|Oven 250 | [[Image:Oven_250_degrees_for_burning_resist_cr3.jpg|200x200px|thumb|Oven 250 °C for burning resist: positioned in C-1]] | ||
This oven is used for "burning" the resist, therefore not considered clean. | This oven is used for "burning" the resist, therefore not considered clean. | ||
<br clear="all" /> | <br clear="all" /> | ||
Revision as of 11:39, 19 March 2014
Feedback to this page: click here
Hotplates
90 C 4" hotplate
This hotplate is mostly used for baking of single wafers at 90 °C as a soft baking step after a spin coating of photoresist.
110 C 4" hotplate
The 110 °C hotplate is used for 2 different things; hard bake of resist, and image reversal baking between two exposures. It is recommended to hard bake for 2 min. For image reversal it is recommended to bake at least 100 sec., some bake for 120 sec.
SU8 hotplates
We have four dedicated SU-8 hotplates in CR3.
Users can control the ramp-time, time and temperature.
Ovens
90 C oven
The oven is mostly used for baking of several wafers at a time at 90 °C as a soft baking step after a spin coating of photoresist. For 1.5µm resist the baking time is 30 min. For most of the other resist thicknesses it is also 30 min.
120 C oven
120 °C oven is used to hard bake of resist on several wafers at time. It is recommended to hard bake for 30 min.
250 C oven for pretreatment
The oven is typically used for pretreatment of silicon and glass substrates to promote the resist adhesion. We recommend to place the wafers in metal carrier in the oven at least for 4 hours, even better over night, and spin the resist on them asap.
250 C oven for burning resist
This oven is used for "burning" the resist, therefore not considered clean.