Specific Process Knowledge/Lithography/LiftOff: Difference between revisions

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== Process information ==
== Process information ==
Lift-off Wet Bench is used for lift-off using resists soluble in acetone.


'''Process recommandations for Lift-off wet bench:'''
'''Process recommandations for Lift-off wet bench:'''

Revision as of 09:54, 7 March 2014

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Lift-off process

Schematic of the lift-off process.
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Comparing Lift-off equipment

Equipment Lift-off Wet Bench Lift-off (4", 6")
Purpose
  • AZ 5214E lift-off
  • AZ 5214E lift-off
  • AZ nLOF lift-off
Bath chemical

Acetone

NMP (Remover 1165)

Process parameters Process temperature

Room temperature

Heating of the bath is possible.

The heating has been limited to 37°C

Ultrasonic agitation

Continuous (on/off)

Continuous or pulsed

The power may be varied

Substrates Substrate size
  • 100 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

Silicon or glass wafers

Film or patterning of all but Type IV (Pb, Te)

Silicon or glass wafers

Film or patterning of all but Type IV (Pb, Te)

Batch

1 - 25

1 - 8


Lift-off Wet Bench

Lift-off wet bench in D-3

This bench is only for wafers with metal!

The user manual, and contact information can be found in LabManager

Process information

Lift-off Wet Bench is used for lift-off using resists soluble in acetone.

Process recommandations for Lift-off wet bench:

  • Place the wafers in a dedicated wafer holder.
  • Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
  • Rinse your wafers for 4-5 min. in running water after stripping.

For more information on image reversal of AZ 5214E, see here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process

Lift-off (4", 6")

Lift-off (4", 6") in D-3

The user manual, and contact information can be found in LabManager

Process information

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