Revision as of 15:24, 5 March 2014

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Comparing Lift-off equipment

Equipment		Lift-off Wet Bench	Lift-off (4", 6")
Purpose		AZ 5214E lift-off	AZ 5214E lift-off AZ nLOF lift-off
Bath chemical		Acetone	NMP (Remover 1165)
Process parameters	Process temperature	Room temperature	Heating of the bath is possible. The heating has been limited to 37°C
Process parameters	Ultrasonic agitation	Continous	Continous or pulsed
Substrates	Substrate size	100 mm wafers	100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials	All cleanroom materials
	Batch	1 - 25	1 - 8

This bench is only for wafers with metal!

Here are the main rules for lift-off bench use:

Place the wafers in a dedicated wafer holder.
Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
Rinse your wafers for 4-5 min. in running water after stripping.

bla bla bla

@@ Line 23: / Line 23: @@
 |style="background:WhiteSmoke; color:black" align="center"|
 NMP (Remover 1165)
-|-
-!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
-|style="background:LightGrey; color:black"|Contact angle
-|style="background:WhiteSmoke; color:black" align="center"|
-standard recipe 82° (on SiO<sub>2</sub>)
-|style="background:WhiteSmoke; color:black" align="center"|
-° - 90°; standard recipe 82° (on SiO<sub>2</sub>)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameters
@@ Line 43: / Line 35: @@
 |style="background:LightGrey; color:black"|Ultrasonic agitation
 |style="background:WhiteSmoke; color:black" align="center"|
-Yes
+Continous
 |style="background:WhiteSmoke; color:black" align="center"|
-Yes
+Continous or pulsed
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates