Specific Process Knowledge/Lithography/LiftOff: Difference between revisions
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=Comparing | =Comparing Lift-off equipment= | ||
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Revision as of 15:21, 5 March 2014
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Comparing Lift-off equipment
| Equipment | Lift-off Wet Bench | Lift-off (4", 6") | |
|---|---|---|---|
| Purpose |
|
| |
| Bath chemical |
Acetone |
NMP (Remover 1165) | |
| Performance | Contact angle |
standard recipe 82° (on SiO2) |
60° - 90°; standard recipe 82° (on SiO2) |
| Process parameters | Process temperature |
Room temperature |
Heating of the bath is possible. The heating has been limited to 37°C |
| Ultrasonic agitation |
Yes |
Yes | |
| Substrates | Substrate size |
|
|
| Allowed materials |
All cleanroom materials |
All cleanroom materials | |
| Batch |
1 - 25 |
1 - 8 | |
Lift-off Wet Bench
This bench is only for wafers with metal!
Here are the main rules for lift-off bench use:
- Place the wafers in a dedicated wafer holder.
- Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
- Rinse your wafers for 4-5 min. in running water after stripping.
Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process
Lift-off (4", 6")
bla bla bla