Revision as of 15:18, 5 March 2014

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Comparing HMDS priming

Equipment		Lift-off Wet Bench	Lift-off (4", 6")
Purpose		AZ 5214E lift-off	AZ 5214E lift-off AZ nLOF lift-off
Bath chemical		Acetone	NMP (Remover 1165)
Performance	Contact angle	standard recipe 82° (on SiO₂)	60° - 90°; standard recipe 82° (on SiO₂)
Process parameters	Process temperature	Room temperature	RT - 50°C
Process parameters	Ultrasonic agitation	Yes	Yes
Substrates	Substrate size	100 mm wafers	100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials	All cleanroom materials
	Batch	1 - 25	1 - 8

Lift-off Wet Bench

This bench is only for wafers with metal!

Here are the main rules for lift-off bench use:

Place the wafers in a dedicated wafer holder.
Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
Rinse your wafers for 4-5 min. in running water after stripping.

Find more info about the lift-off process here: Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process

Lift-off (4", 6")

bla bla bla

@@ Line 9: / Line 9: @@
 |style="background:WhiteSmoke; color:black" align="center"|<b>[[Specific Process Knowledge/Lithography/LiftOff#Lift-off (4", 6")|Lift-off (4", 6")]]</b>
 |-
-!style="background:silver; color:black;" align="center" width="60"|Purpose
+!style="background:silver; color:black;" align="center"|Purpose
 |style="background:LightGrey; color:black"|
 |style="background:WhiteSmoke; color:black"|
-* HMDS priming
+* AZ 5214E lift-off
 |style="background:WhiteSmoke; color:black"|
-* HMDS priming only
+* AZ 5214E lift-off
-* HMDS priming and spin coating
+* AZ nLOF lift-off
 |-
-!style="background:silver; color:black;" align="center" width="60"|Priming chemical
+!style="background:silver; color:black;" align="center"|Bath chemical
 |style="background:LightGrey; color:black"|
-|style="background:WhiteSmoke; color:black" align="center" colspan="2"|
+|style="background:WhiteSmoke; color:black" align="center"|
-hexamethyldisilizane (HMDS)
+Acetone
+|style="background:WhiteSmoke; color:black" align="center"|
+NMP (Remover 1165)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="1"|Performance
@@ Line 33: / Line 35: @@
 |style="background:LightGrey; color:black"|Process temperature
 |style="background:WhiteSmoke; color:black" align="center"|
-°C
+Room temperature
 |style="background:WhiteSmoke; color:black" align="center"|
-°C
+RT - 50°C
 |-
-|style="background:LightGrey; color:black"|Process time
+|style="background:LightGrey; color:black"|Ultrasonic agitation
 |style="background:WhiteSmoke; color:black" align="center"|
-.5 minutes
+Yes
 |style="background:WhiteSmoke; color:black" align="center"|
-min / wafer
+Yes
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
 |style="background:LightGrey; color:black"|Substrate size
 |style="background:WhiteSmoke; color:black" align="center"|
-* 50 mm wafers
+* 100 mm wafers
+|style="background:WhiteSmoke; color:black" align="center"|
 * 100 mm wafers
 * 150 mm wafers
-|style="background:WhiteSmoke; color:black" align="center"|
-mm wafers
 |-
 | style="background:LightGrey; color:black"|Allowed materials
@@ Line 56: / Line 57: @@
 All cleanroom materials
 |style="background:WhiteSmoke; color:black" align="center"|
-Silicon (with oxide, nitride, or metal films or patterning)
+All cleanroom materials
-Glass (borosilicate and quartz)
 |-
 |style="background:LightGrey; color:black"|Batch
 |style="background:WhiteSmoke; color:black" align="center"|
-- 25, multiple batches possible
+- 25
 |style="background:WhiteSmoke; color:black" align="center"|
-- 25
+- 8
 |-
 |}
 <br clear="all" />
 =Lift-off Wet Bench=