Specific Process Knowledge/Etch/Etching of Gold: Difference between revisions

Revision as of 09:49, 15 January 2008

Etching of Gold is done wet at Danchip. We have two different solutions:

KI:I $_{2}$ :H $_{2}$ OFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle 400g:100g:400ml? # HNO<math>_3} :HCl 1:3

	Iodine based gold etch	Aqua Regia (Kongevand)
General description	Etch of pure aluminium	Etch of aluminium + 1.5% Si
Chemical solution	H $_{2}$ O:H $_{3}$ PO $_{4}$ 1:2	PES 77-19-04
Process temperature	50 ^oC	20 ^oC
Possible masking materials:	Photoresist (1.5 µm AZ5214E)	Photoresist (1.5 µm AZ5214E)
Etch rate	~100 nm/min (Pure Al)	~60(??) nm/min
Batch size	1-25 wafers at a time	1-25 wafer at a time
Size of substrate	4" wafers	4" wafers
Allowed materials	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist	Aluminium Silicon Silicon Oxide Silicon Nitride Silicon Oxynitride Photoresist E-beam resist

@@ Line 1: / Line 1: @@
-==Etching of Aluminium==
+==Etching of Gold==
-Etching of aluminium is done wet at Danchip. We have two different solutions:
+Etching of Gold is done wet at Danchip. We have two different solutions:
-# H<math>_2</math>O:H<math>_3</math>PO<math>_4</math>  1:2 at 50 <sup>o</sup>C
+# KI:I<math>_2</math>:H<math>_2</math>O<math>  400g:100g:400ml?
-# Pre-mixed etch solution: PES 77-19-04 at 20 <sup>o</sup>C
+# HNO<math>_3</math>:HCl 1:3
@@ Line 10: / Line 10: @@
 {| border="1" cellspacing="0" cellpadding="4" align="left"
 !
-! Aluminium Etch 1
+! Iodine based gold etch
-! Aluminium Etch 2
+! Aqua Regia (Kongevand)
 |-
 |General description