Specific Process Knowledge/Thin film deposition: Difference between revisions

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[[/Deposition of Silicon Nitride|Silicon Nitride]] - ''and oxynitride'' <br/>
[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_LPCVD|Silicon Nitride]] - ''and oxynitride'' <br/>
[[/Deposition of Silicon Oxide|Silicon Oxide]]<br/>
[[/Deposition of Silicon Oxide|Silicon Oxide]]<br/>
[[/Deposition of Titanium Oxide|Titanium Oxide]]<br/>
[[/Deposition of Titanium Oxide|Titanium Oxide]]<br/>

Revision as of 11:57, 28 January 2014

3rd Level - Material/Methode

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Choose material to deposit

Dielectrica

Metals/elements

Period/Group

IVB VB VIB VIIIB IB IIIA IVA
3 . . . . . 13 Al Aluminium 14 Si Silicon
4 22 Ti Titanium . 24 Cr Chromium 28 Ni Nickel 29 Cu Copper . 32 Ge Germanium
5 . . 42 Mo Molybdenum 46 Pd Palladium 47 Ag Silver . 50 Sn Tin
6 . 73 Ta Tantalum 74 W Tungsten 78 Pt Platinum 79 Au Gold . .

Alloys


Polymers

Choose deposition equipment

Section under construction

Dielectrica Semicondutors Metals Alloys Polymers

Silicon Nitride - and oxynitride
Silicon Oxide
Titanium Oxide

Silicon
Germanium

Aluminium
Titanium
Chromium
Nickel
Copper
Molybdenum
Palladium
Silver
Tin
Tantalum
Tungsten
Platinum
Gold

TiW alloy (10%/90% by weight)
NiCr alloy
AlTi alloy

SU8
Antistiction coating
Topas
PMMA


PVD LPCVD PECVD Coaters Others

See the Lithography/Coaters page for coating polymers