Specific Process Knowledge/Characterization/Thickness Measurer: Difference between revisions

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VisualWikitext

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 Purpose
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-Measurer the thinkness of silicon wafer
+Thickness measurer
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-??
+*Wafer
+*Depths of larger grooves
+*Heigth of larger mesas
 |-
 !style="background:silver; color:black" align="center"|
 Performance
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-??
+Thickness within
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-??
+.5 µm
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-!style="background:silver; color:black" align="center" valign="center" rowspan="3"|
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|
 Process parameter range
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 Process Temperature
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-*800-1150 <sup>o</sup>C
+*Room temperature
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 |style="background:LightGrey; color:black"|Process pressure
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 *1 atm
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-|style="background:LightGrey; color:black"|Gasses on the system
+!style="background:silver; color:black" align="center" valign="center" rowspan="2"|
-|style="background:WhiteSmoke; color:black"|
+Substrates
+|style="background:LightGrey; color:black"|
-|-
+Batch size
-!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
-|style="background:LightGrey; color:black"|Batch size
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-*1-30 100 mm wafers (or 50 mm wafers) per run
+*One sample per measure
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed
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-*Silicon wafers (RCA cleaned) without metal bulk contamination
+No restriction.
 |-
 |}