Specific Process Knowledge/Characterization/Thickness Measurer: Difference between revisions

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The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.  
The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.  
Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.
Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.



Revision as of 10:25, 13 January 2014

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Thickness measurer

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Thickness meassurer. Positioned in cleanroom 4

The purpose is to measure the thickness of wafers, depths of larger grooves or height of larger mesas.

Doing a KOH etch can it be helpful to insure no over etching by making a thickness measurement doing the etch.

The user manual, technical information and contact information can be found in LabManager:

Thickness measurer

Process knowledge

Equipment performance and process related parameters

Purpose

Measurer the thinkness of silicon wafer

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Performance

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Process parameter range

Process Temperature

  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
Substrates Batch size
  • 1-30 100 mm wafers (or 50 mm wafers) per run
Substrate materials allowed
  • Silicon wafers (RCA cleaned) without metal bulk contamination


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This is a micrometer-screw.

The Thickness measurer in Cleanroom 3

It measures with an accurracy within a few µm. The range is from a few µm up to 5mm. Measure the wafer in the box next to the meter. If this is ok, then other wafers can be measured. There is a calibration device by the DEKTAK. It is calibrated at 750µm.