Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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Phosphorus Drive-in furnace (A3)

The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and for drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Pre-dep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.

The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.

The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:

Phosphorus Drive-in furnace (A3)

Process knowledge

Phosphorus drive-in: look at the Dope with Phosphorus page
Oxidation: look at the Oxidation page
Annealing: look at the Annealing page

Quality Control - Recipe Parameters and Limits

Quality Control (QC) for the processes "Wet1050" and "Dry1050"

QC Recipe:	Wet1050	Dry1050
H₂ flow	3 sccm	0 sccm
O₂ flow	2 sccm	5 sccm
Temperature	1050 C	1050 C
Oxidation time	30 min	100 min

QC limits	Thickness	Non-uniformity (both over a single wafer and over the boat)
Dry1050	110-116 nm	3 %
Wet1050	305-321 nm	5 %

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose	Drive-in of phosphorous Oxidation of silicon Oxidation of phosphorous phase layers Annealing of the oxide.	Oxidation: Dry Wet: with torch (H₂+O₂)
Performance	Film thickness	Dry SiO₂: 50 Å to ~2000 Å (it takes too long to grow a thicker oxide) Wet SiO₂: 50 Å to ~3 µm (it takes too long to grow a thicker oxide)
Process parameter range	Process Temperature	800-1150 ^oC
	Process pressure	1 atm
	Gasses on the system	O₂, N₂ and H₂
Substrates	Batch size	1-30 100 mm wafers (or 50 mm wafers) per run
Substrates	Substrate materials allowed	Silicon wafers (RCA cleaned) Wafers from the the Phosphorus Pre-dep furnace can go directly into the furnace

@@ Line 2: / Line 2: @@
 ==Phosphorus Drive-in furnace (A3)==
-[[Image:A3helstak.jpg|thumb|300x300px|A3 Phosphor Drive-in furnace. Positioned in cleanroom 2]]
+[[Image:A3helstak.jpg|thumb|300x300px|Phosphorus Drive-in furnace (A3). Positioned in cleanroom 2]]
-The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Predep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.
+The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and for drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Pre-dep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.
 The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.
@@ Line 19: / Line 19: @@
 ==Quality Control - Recipe Parameters and Limits==
 {| border="1" cellspacing="2" cellpadding="2" colspan="3"
-|bgcolor="#98FB98" |'''Quality Controle (QC) for the processes "Wet1050" and "Dry1050"'''
+|bgcolor="#98FB98" |'''Quality Control (QC) for the processes "Wet1050" and "Dry1050"'''
 |-
 |
-*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus Furnace A3]<br>
+*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus drive-in furnace (A3)]<br>
 *[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br>
@@ Line 55: / Line 55: @@
 !QC limits
 |Thickness
-|Non-uniformity (both single wafer and over the boat)
+|Non-uniformity (both over a single wafer
+ and over the boat)
 |-
 !Dry1050
@@ Line 78: / Line 79: @@
 *Drive-in of phosphorous
 *Oxidation of silicon
-*Oxidation of phosphorous phase layer
+*Oxidation of phosphorous phase layers
 *Annealing of the oxide.
 |style="background:WhiteSmoke; color:black"|Oxidation:
@@ Line 106: / Line 107: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 100 mm wafer (or 50 mm wafers) per run
+*1-30 100 mm wafers (or 50 mm wafers) per run
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (RCA cleaned)
-*From A4 furnace directly (e.g. incl. Predep HF)
+*Wafers from the the Phosphorus Pre-dep furnace can go directly into the furnace
 |-
 |}