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Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page


==Quality Control - Parameters and Limits==
==Quality Control - Recipe Parameters and Limits==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for RIE1 and RIE2'''
|bgcolor="#98FB98" |'''Quality Controle (QC) for process Wet1050 and Dry1050'''
|-
|-
|
|
*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2846&mach=82 The QC procedure for Phosphorus Furnace A3]<br>
*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus Furnace A3]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=2847 The newest QC data for wet and dry oxide]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br>


{| {{table}}
{| {{table}}
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! QC Recipe:
! QC Recipe:
! Wet1050
! Wet1050
! Dry1050
|-  
|-  
| H<sub>2</sub> flow
| H<sub>2</sub> flow
|3 sccm
|3 sccm
|0 sccm
|-
|-
|O<sub>2</sub> flow
|O<sub>2</sub> flow
|2 sccm
|2 sccm
|5 sccm
|-  
|-  
|Temperature
|Temperature
|1050 C
|1050 C
|1050 C
|-
|-
|Oxidation time
|Oxidation time
|30 min
|30 min
|100 min
|-
|-
|}
|}
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{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!QC limits
!Wet1050
|Thickness
|Non-uniformity (both single wafer and over the boat)
|-
!Dry1050
!Dry1050
|108-114 nm
|3 %
|-
|-
|Thickness
!Wet1050
|108-114 nm
|286-302 nm
|286-302 nm
|-
|Non-uniformity
|3 %
|5 %
|5 %
|-
|-
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