Specific Process Knowledge/Thermal Process/A3 Phosphor Drive-in furnace: Difference between revisions

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*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page


==Quality Control - Parameters and Limits==
==Quality Control - Recipe Parameters and Limits==
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Controle (QC) for RIE1 and RIE2'''
|bgcolor="#98FB98" |'''Quality Controle (QC) for process Wet1050 and Dry1050'''
|-
|-
|
|
*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2846&mach=82 The QC procedure for Phosphorus Furnace A3]<br>
*[http://www.labmanager.danchip.dtu.dk/d4Show.php?id=2847&mach=82 The QC procedure for Phosphorus Furnace A3]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=2847 The newest QC data for wet and dry oxide]<br>
*[http://www.labmanager.danchip.dtu.dk/view_binary.php?fileId=1988 The newest QC data for wet and dry oxide]<br>


{| {{table}}
{| {{table}}
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! QC Recipe:
! QC Recipe:
! Wet1050
! Wet1050
! Dry1050
|-  
|-  
| H<sub>2</sub> flow
| H<sub>2</sub> flow
|3 sccm
|3 sccm
|0 sccm
|-
|-
|O<sub>2</sub> flow
|O<sub>2</sub> flow
|2 sccm
|2 sccm
|5 sccm
|-  
|-  
|Temperature
|Temperature
|1050 C
|1050 C
|1050 C
|-
|-
|Oxidation time
|Oxidation time
|30 min
|30 min
|100 min
|-
|-
|}
|}
Line 49: Line 54:
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:500px"
!QC limits
!QC limits
!Wet1050
|Thickness
|Non-uniformity (both single wafer and over the boat)
|-
!Dry1050
!Dry1050
|108-114 nm
|3 %
|-
|-
|Thickness
!Wet1050
|108-114 nm
|286-302 nm
|286-302 nm
|-
|Non-uniformity
|3 %
|5 %
|5 %
|-
|-

Revision as of 16:53, 3 December 2013

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Phosphorus Drive-in furnace (A3)

A3 Phosphor Drive-in furnace. Positioned in cleanroom 2

The Phosphorus Drive-in furnace (A3) is a Tempress horizontal furnace for oxidation of silicon wafers, annealing of the grown oxide and drive-in of phosphorus after a pre-deposition. Phosphorus pre-deposition takes place in the Phosphorus Predep furnace (A4). The Phosphorus Drive-in furnace can also be used for drive-in of phosphorus which has been ion implanted.

The Phosphorus Drive-in furnace is the third furnace tube in the A-stack positioned in cleanroom 2. The A-stack together with the Gate Oxide furnace (C2) are the cleanest of all furnaces in the cleanroom. Please be aware of which substrates are allowed to enter this furnace. Check the cross contamination chart.

The user manual, quality control instruction and results, technical information and contact information can be found in LabManager:

Phosphorus Drive-in furnace (A3)

Process knowledge

Quality Control - Recipe Parameters and Limits

Quality Controle (QC) for process Wet1050 and Dry1050
QC Recipe: Wet1050 Dry1050
H2 flow 3 sccm 0 sccm
O2 flow 2 sccm 5 sccm
Temperature 1050 C 1050 C
Oxidation time 30 min 100 min
QC limits Thickness Non-uniformity (both single wafer and over the boat)
Dry1050 108-114 nm 3 %
Wet1050 286-302 nm 5 %

Overview of the performance of the phosphorus drive-in furnace and some process related parameters

Purpose Drive-in of phosphor, oxidation of silicon and annealing of the oxide. Oxidation:
  • Dry
  • Wet: with torch (H2+O2)
Performance Film thickness
  • Dry SiO2: 50 Å to ~2000 Å (takes too long to make it thicker)
  • Wet SiO2: 50 Å to ~3 µm (takes too long to make it thicker)
Process parameter range Process Temperature
  • 800-1150 oC
Process pressure
  • 1 atm
Gasses on the system
  • O2, N2 and H2
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
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