Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143

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The nano1.43 recipe

Recipe nano1.43

Recipe	Gas	C4F8 75 sccm, SF6 38 sccm
	Pressure	4 mTorr, Strike 3 secs @ 15 mTorr
	Power	800 W CP, 30 W PP
	Temperature	-20 degs
	Hardware	100 mm Spacers
	Time	120 secs
Conditions	Run ID	2018
	Conditioning	Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
	Mask	211 nm zep etched down to 102 nm

• The results of the nano1.43 recipe
• 
  The 30 nm trenches
• 
  The 60 nm trenches
• 
  The 90 nm trenches
• 
  The 120 nm trenches
• 
  The 150 nm trenches
• File:C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 30 W PP, -20 degs, 120 secs

Nominal trench line width	'	30	60	90	120	150	Average	Std. dev.
Etch rates	nm/min	139	147	149	152	152	148	6
Sidewall angle	degs	90	90	90	90	90	90	0
CD loss	nm/edge	6	-21	-21	-41	-45	-24	21
CD loss foot	nm/edge	11	-8	-8	-28	-18	-10	14
Bowing		1	-1	1	1	0	0	1
Bottom curvature		-50	-47	-34	-32	-31	-39	9
zep	nm/min						55