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Specific Process Knowledge/Thermal Process/Dope with Phosphorus: Difference between revisions

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====Results====
====Results====
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Several measurements were done for the different device waferss. After the predeposition, the thickness of the grown phosphorus glass layer was measured, and the sheet resistance and slice resistivity were measured on the same wafer after a BHF etch.  
Several measurements were done for the different device wafers. After the predeposition, the thickness of the grown phosphorus glass layer was measured, and the sheet resistance and slice resistivity were measured on the same wafer after a BHF etch.  


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